Aspects of the present invention provide a blue organic light-emitting device having a continuous operation lifetime.
An organic light-emitting device includes a light-emitting layer containing a dopant having the ability to trap electrons or holes, and a hole-blocking layer or electron-blocking layer, in which the difference between the LUMO of the dopant and the LUMO of a host material, the size relationship between the HOMO of the host material and the HOMO of the dopant, and the difference between the T1 of the host material and the T1 of the hole-blocking layer or between the T1 of the host material and the T1 of the electron-blocking layer, are specified.
A benzopyrene compound represented by a general formula  below,
where one of X1 and X2 represents a substituted or unsubstituted aryl group; another one of X1 and X2 represents a hydrogen atom; R represents an alkyl group; and n represents 0 or 1.
The flat bottle includes a cylindrical body and a bottom closing a lower opening of the body, and is formed in a flattened shape in lateral cross-section having a major axis (La) and a minor axis (Sa). A bottom wall of the bottom includes a rising circumferential wall extending upward; an annular movable wall projecting inward from the rising circumferential wall in a bottle radial direction; and a recessed circumferential wall extending upward from the movable wall. The movable wall is movable around a connected portion with the rising circumferential wall. The length of the bottom along the major axis is 1.2 to 2.0 times the length of the bottom along the minor axis. The length of the movable wall along the major axis is 0.8 to 2.5 times the length of the movable wall along the minor axis.
The discloser provides a multi-input and multi-output optical switch capable of switching over all WDM wavelengths. An optical switch according to one embodiment includes: an optical demultiplexing element (3) that demultiplexes an optical signal from at least one input port into individual wavelengths; a first optical deflection element (5), which deflects an incident optical signal, that deflects the wavelength-separated optical signal incoming from the optical demultiplexing element to change a traveling direction for each wavelength to a switch axis direction perpendicular to a wavelength dispersion axis direction; a second optical deflection element (8) that deflects the optical signal incoming from the first optical deflection element to change the traveling direction to the switch axis direction for output to at least one of the output ports; and an optical multiplexing element (10) that multiplexes the optical signal with the different wavelengths incoming from the second optical deflection element.
A semiconductor includes an N-type impurity region provided in a substrate. A P-type RESURF layer is provided at a top face of the substrate in the N-type impurity region. A P-well has an impurity concentration higher than that of the P-type RESURF layer, and makes contact with the P-type RESURF layer at the top face of the substrate in the N-type impurity region. A first high-voltage-side plate is electrically connected to the N-type impurity region, and a low-voltage-side plate is electrically connected to a P-type impurity region. A lower field plate is capable of generating a lower capacitive coupling with the substrate. An upper field plate is located at a position farther from the substrate than the lower field plate, and is capable of generating an upper capacitive coupling with the lower field plate whose capacitance is greater than the capacitance of the lower capacitive coupling.
A semiconductor device includes: a semiconductor substrate having a main surface having an element formation region, a guard ring, a guard ring electrode, a channel stopper region, a channel stopper electrode, and a field plate disposed over and insulated from the semiconductor substrate. The field plate includes a first portion located between the main surface of the semiconductor substrate and the guard ring electrode, and a second portion located between the main surface of the semiconductor substrate and the channel stopper electrode. The first portion has a portion overlapping with the guard ring electrode when viewed in a plan view. The second portion has a portion overlapping with the channel stopper electrode when viewed in the plan view. In this way, a semiconductor device allowing for stabilized breakdown voltage can be obtained.
Provided are an organic compound having high heat stability suitable for use in an organic light-emitting device, and an organic light-emitting device using the organic compound. The organic light-emitting device is an organic light-emitting device, including: an anode; a cathode; and an organic compound layer disposed between the anode and the cathode, in which at least one layer of the organic compound layer has a 6,12-dinaphthylchrysene derivative represented by one of the following general formulae (1) and (2):
in the formulae (1) and (2), Z represents a naphthyl group, and Q represents an electron-withdrawing substituent selected from the group consisting of the following general formulae (3) to (5):
in the formula (5), R1 represents a hydrogen atom or a methyl group.
A multiplexing transmission system for adding a management overhead to a client signal, and transparently accommodating or multiplexing the client signal to transmit it is provided. The multiplexing transmission system: accommodates a plurality of client signals of different bit rates including a client signal of a bit rate that is not an integral multiple or an integral submultiple of a bit rate of other client signal, and performs rate adjustment for a part or the whole of the plurality of client signals such that the bit rate of each client signal becomes an integral multiple or integral submultiple of the bit rate of other client signal.
A semiconductor device, including: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a trench formed in the semiconductor region; a trench diffusion layer of the first conductivity type formed along wall surfaces of the trench; and a buried conductor buried in the trench, wherein an insulation film is further disposed between the wall surfaces of the trench and the buried conductor.
A ferrule holder and a coil spring are provided in a main body formed in an approximately tube shape. A cable adaptor including a front opening part at a large diameter part is inserted from a back opening part into the main body having slits and. A first small diameter part of the main body fits with the large diameter part of the cable adaptor and prevents the cable adaptor from translating in the z-axis direction. And the second small diameter part of the main body controls transfer of the ferrule holder in the z-axis direction. At the forward part of the large diameter, a taper part which helps to insert the cable adaptor is formed around the circuit of the optical axis. Each slit formed at the back opening part also helps to insert the cable adaptor.
A capacity variable link apparatus including a main signal system and a control signal system is provided. The main signal system includes: an upper layer signal accommodation part; a lower layer path termination part; and a signal switching part for dividing the upper layer signal to lower layer signals in a lower layer path group having a capacity that is determined according to an amount of traffic of the upper layer signal. The control system includes: a traffic amount measuring part for measuring the amount of traffic of the upper layer and for determining whether the capacity of the lower layer path group is to be increased or decreased according to the amount; and a signal switching management part for controlling the signal switching part according to the result of the determination.