Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
home > search

Now showing items 1 - 16 of 67

  • Power semiconductor device having trench gate type IGBT and diode regions

    Switching loss is reduced. A first surface of a semiconductor substrate has a portion included in an IGBT region and a portion included in a diode region. Trenches formed in the first surface include a gate trench and a boundary trench disposed between the gate trench and the diode region. A fourth layer of the semiconductor substrate is provided on the first surface and has a portion included in the diode region. The fourth layer includes a trench-covering well region that covers the deepest part of the boundary trench, a plurality of isolated well regions, and a diffusion region that connects the trench-covering well region and the isolated well regions. The diffusion region has a lower impurity concentration than that of the isolated well regions. A first electrode is in contact with the isolated well regions and away from the diffusion region.
    Download Collect
  • Organic light emitting element

    Provided is an organic light emitting element having stable performance in the air. The organic light emitting element includes: an anode; a cathode; and a first organic compound layer placed between the anode and the cathode, in which: the organic light emitting element further includes a first organic compound layer placed between the cathode and the emission layer, and a second organic compound layer placed between the emission layer and the first organic compound layer, and brought into contact with the first organic compound layer; the first organic compound layer contains a first organic compound; the second organic compound layer contains a second organic compound; and the first organic compound includes an organic compound represented by the following general formula [1], and the second organic compound includes an organic compound different from the first organic compound
    Download Collect
  • Semiconductor device and method for fabricating the same

    A semiconductor includes an N-type impurity region provided in a substrate. A P-type RESURF layer is provided at a top face of the substrate in the N-type impurity region. A P-well has an impurity concentration higher than that of the P-type RESURF layer, and makes contact with the P-type RESURF layer at the top face of the substrate in the N-type impurity region. A first high-voltage-side plate is electrically connected to the N-type impurity region, and a low-voltage-side plate is electrically connected to a P-type impurity region. A lower field plate is capable of generating a lower capacitive coupling with the substrate. An upper field plate is located at a position farther from the substrate than the lower field plate, and is capable of generating an upper capacitive coupling with the lower field plate whose capacitance is greater than the capacitance of the lower capacitive coupling.
    Download Collect
  • Organic light emitting element

    Provided is an organic light emitting element having stable performance in the air. The organic light emitting element includes: an anode; a cathode; and an emission layer placed between the anode and the cathode, in which: the organic light emitting element further includes a first organic compound layer placed between the cathode and the emission layer, and a second organic compound layer placed between the emission layer and the first organic compound layer, and contacted with the first organic compound layer; the first organic compound layer contains a first organic compound; the second organic compound layer contains a second organic compound; and the first organic compound includes a viologen compound represented by the following general formula [1] and the second organic compound includes an organic compound different from the viologen compound.
    Download Collect
  • Semiconductor device

    A semiconductor device includes a substrate having an upper surface layer of a second conduction type formed at an upper surface side, a drift layer of a first conduction type formed under the upper surface layer, a buffer layer of the first conduction type formed under the drift layer, and a lower surface layer of the second conduction type formed under the buffer layer, the buffer layer includes a plurality of upper buffer layers provided apart from each other, and a plurality of lower buffer layers provided apart from each other between the plurality of upper buffer layers and the lower surface layer, wherein the plurality of upper buffer layers are formed so that average impurity concentrations in first sections each extending from the upper end of one of the upper buffer layers to the next lower buffer layer are unified as a first concentration.
    Download Collect
  • Power semiconductor device having trench gate type IGBT and diode regions

    Switching loss is reduced. A first surface of a semiconductor substrate has a portion included in an IGBT region and a portion included in a diode region. Trenches formed in the first surface include a gate trench and a boundary trench disposed between the gate trench and the diode region. A fourth layer of the semiconductor substrate is provided on the first surface and has a portion included in the diode region. The fourth layer includes a trench-covering well region that covers the deepest part of the boundary trench, a plurality of isolated well regions, and a diffusion region that connects the trench-covering well region and the isolated well regions. The diffusion region has a lower impurity concentration than that of the isolated well regions. A first electrode is in contact with the isolated well regions and away from the diffusion region.
    Download Collect
  • Semiconductor device

    A semiconductor device is configured such that the distance between the trench gate in the IGBT and the trench gate in the diode is reduced or a p-well layer is provided between the trench gate in the IGBT and the trench gate in the diode.
    Download Collect
  • Semiconductor device having breakdown voltage enhancement structure

    A semiconductor device includes a substrate of a first conductivity type, a first impurity region of a second conductivity type formed on a top surface side of the substrate, a second impurity region of the second conductivity type formed on the top surface side of the substrate and in contact with the first impurity region, the second impurity region laterally surrounding the first impurity region and having a greater depth than the first impurity region, as viewed in cross-section, and a breakdown voltage enhancing structure of the second conductivity type formed to laterally surround the second impurity region. A boundary between the first and second impurity regions has a maximum impurity concentration equal to or less than that of the second impurity region, and a current is applied between a top surface and a bottom surface of the substrate.
    Download Collect
  • Semiconductor device and manufacturing method thereof

    A semiconductor device includes: a layer of a first conductivity type; a well of a second conductivity type on the layer of the first conductivity type in an active region; and a flat RESURF layer of the second conductivity type on the layer of the first conductivity type on an outer circumference of the well as a termination structure. The RESURF layer includes a low concentration layer arranged at an inner end on the well side and an outer end on the outer circumferential side, and a high concentration layer arranged between the inner end and the outer end and having a higher impurity concentration than the low concentration layer.
    Download Collect
  • Organic light emitting device

    Provided is an organic light emitting device that has high efficiency and high durability against continuous driving. The organic light emitting device includes an anode, a cathode, and organic compound layers placed between the anode and the cathode, in which the organic compound layers include a hole transport layer and an emitting layer, the hole transport layer and the emitting layer are in contact with each other, the hole transport layer has an arylamine compound and an aromatic hydrocarbon compound, and the emitting layer has a host and an electron trap dopant.
    Download Collect
  • Fused polycyclic compound and organic light emitting element including the same

    The present invention provides a novel fused polycyclic compound suitably used for a blue light emitting element and an organic light emitting element including the fused polycyclic compound. A fused polycyclic compound is represented by at least one of the general formulas [1] and [2] according to claim 1. In the general formulas [1] and [2], R1 to R20 each represent a hydrogen atom or a substituent.
    Download Collect
  • Field plate configuration of a semiconductor device

    A semiconductor device includes a semiconductor substrate having a principal surface, and an insulating film formed on the principal surface and continuously covering a top surface of a first boundary region and a top surface of a second boundary region, the first boundary region including a boundary between a well layer and a RESURF layer, the second boundary region including a boundary between the RESURF layer and a first impurity region. The semiconductor device further includes a plurality of lower field plates formed in the insulating film in such a manner that the plurality of lower field plates do not lie directly above the first and second boundary regions, and a plurality of upper field plates formed on the insulating film in such a manner that the plurality of upper field plates do not lie directly above the first and second boundary regions.
    Download Collect
  • Reverse-conducting IGBT with buffer layer and separation layer for reducing snapback

    In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other. Therefore, the present invention makes it possible to reduce snapback.
    Download Collect
  • Semiconductor device

    Download Collect
  • Semiconductor device

    In one surface of a semiconductor substrate, an n− layer, a p base layer, a p well layer, another p well layer, a channel stopper layer, an emitter electrode, a guard ring electrode, and a channel stopper electrode for example are formed. In the other surface of the semiconductor substrate, an n+ buffer layer, a p+ collector layer, and a collector electrode are formed. In a curved corner of the p well layer, a p low-concentration layer having a lower impurity concentration than the impurity concentration of the p well layer is formed from the surface to a predetermined depth.
    Download Collect
  • Reverse-conducting IGBT with buffer layer and separation layer for reducing snapback

    In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other. Therefore, the present invention makes it possible to reduce snapback.
    Download Collect
1 2 3 4 5

Contact

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

Submit Feedback