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Now showing items 1 - 16 of 2287817

  • Physical properties of indium nitride, impurities, and defects

    Khludkov, S. S.   Prudaev, I. A.   Tolbanov, O. P.  

    A review of the literature on the InN physical properties and state of impurities and defects in it based on the data published recently is presented. It is demonstrated that by the present time, significant progress has been made in synthesis of the material, study of its physical properties, and device making. It is established that InN has a band gap of 0.7 eV. Doping of InN with magnesium makes it possible to obtain layers with p-type conductivity and preset properties. The unique InN properties allow it to be considered as a promising material for a number of new devices.
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  • Electrical Properties OF GaAs Doped with Iron

    Khludkov, S. S.   Prudaev, I. A.   Novikov, V. A.   Budnitskii, D. L.   Lopatetskaya, K. S.  

    Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe during growth, in GaAs doped in the diffusion process, the impurity Fe creates an acceptor level 0.53 eV above the top of the GaAs valence band. The position of the energy level of Fe and the electrical characteristics of GaAs:Fe are independent of the regime of the samples annealing at a temperature below the doping temperature.
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  • Electrical Properties OF GaAs Doped with Iron

    Khludkov, S. S.   Prudaev, I. A.   Novikov, V. A.   Budnitskii, D. L.   Lopatetskaya, K. S.  

    Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe during growth, in GaAs doped in the diffusion process, the impurity Fe creates an acceptor level 0.53 eV above the top of the GaAs valence band. The position of the energy level of Fe and the electrical characteristics of GaAs:Fe are independent of the regime of the samples annealing at a temperature below the doping temperature.
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  • Gallium nitride as a material for spintronics

    Khludkov, S. S.   Prudaev, I. A.   Тоlbanov, О. P.  

    The literature on the magnetic properties of GaN doped with magnetic impurities: the transition metals (Mn, Cr, Fe, Ni, and V) and rare earth elements (Gd, Eu, and Sm), as well as gallium nitride containing high concentration of gallium vacancies and quantum dots is reviewed. The properties of GaN doped by ion implantation and during the MBE and MOVPE growth of layers are considered. The undoped GaN and GaN films doped with the transition metals and rare earth elements often retain ferromagnetic properties at room temperature.
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  • ChemInform Abstract: Gallium Nitride as a Material for Spintronics

    Khludkov, S. S.   Prudaev, I. A.   Tolbanov, O. P.  

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  • Electrical,Structural,and Magnetic Properties of Gallium Arsenide Doped with Iron

    Khludkov, S. S.   Prudaev, I. A.   Tolbanov, O. P.  

    The data on the electrical, structural, and magnetic properties of the iron doped gallium arsenide obtained by various methods are systematized. The conditions for obtaining structures with magnetic properties are considered.
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  • Antipsychotics

    Khludkov, S. S.   Prudaev, I. A.   Tolbanov, O. P.  

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  • A switching delay of avalanche S-diodes in optical-drive circuits

    Prudaev, I. A.   Skakunov, M. S.   Tolbanov, O. P.   Khludkov, S. S.   Degtyarenko, K. M.  

    Results of studying avalanche S-diodes in a circuit with pulse optical drives are presented. The experimental delay time dependences of the S-diode switching from disabled to enabled states on the energy of the laser emission with a 0.78-mu m wavelength are given. It is shown that the avalanche S-diode switching delay is caused by the deep-seated trap recharging process in the space-charge region.
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  • Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties

    Khludkov, S. S.   Prudaev, I. A.   Tolbanov, O. P.  

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  • Switching avalanche S-diodes based on GaAs multilayer structures

    Prudaev, I. A.   Khludkov, S. S.   Skakunov, M. S.   Tolbanov, O. P.  

    Results of studying volt-ampere characteristics of switching avalanche S-diodes are presented. It is shown that, for S-diodes based on structures obtained by diffusing Cr into GaAs, a larger part of the applied reverse-biased voltage drops across a high-resistance pi-region but not across the space-charge region. In this case, the sharp increase of the current is caused by the electron injection from the forward-biased contact to the pi-layer. In this respect, a new GaAs-based structure doped with Cr and Fe (GaAs:Cr, Fe) is studied. It is shown that, in S-diodes based on (GaAs:Cr, Fe)-structures, the current increase under a reverse bias is caused by avalanche processes in the space-charge area. This leads to producing a negative differential resistance section with subnanosecond switching from the closed to open state. The switching voltages of S-diodes on GaAs:Cr, Fe structures vary from 350 to 650 V, and the switching times do not exceed 0.5 ns.
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  • Tosedostat

    Khludkov, S. S.   Prudaev, I. A.   Tolbanov, O. P.  

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  • Lithium

    Khludkov, S. S.   Prudaev, I. A.   Tolbanov, O. P.  

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  • Diffusion and solubility of electrically active iron atoms in gallium arsenide

    Prudaev, I. A.   Khludkov, S. S.  

    Iron diffusion in GaAs at arsenic pressure 1 atm is studied. The temperature dependences of the diffusion coefficient and solubility of electrically active iron atoms in GaAs are determined. The dependences can be described by the Arrhenius equations with the following parameters: D (0) = 1.61 cm(2)/s and E = (2.16 +/- 0.47) eV (for diffusion) and N (S) (0) = 4.62 a <... 10(23) cm(-3) and E (S) = (1.61 +/- 0.16) eV (for solubility). The results obtained are compared with the earlier published data. The concentration of electrically active iron atoms is shown to be about 2 times lower than the total iron concentration in GaAs.
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  • Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide

    Khludkov, S. S.  

    The results of studying the diffusion of Cr impurity in GaAs according to electrical measurements are reported. Dependences of the diffusion coefficient and limiting solubility of electrically active Cr atoms in GaAs on temperature (at fixed pressures of As vapors) and on the pressure of As vapors (at fixed temperatures) are determined. The dependence of the Cr diffusion coefficient in GaAs on the ratio between the volume of the sample under study to the volume of the cell in the case of pronounced deviation from the crystal's stoichiometry towards Ga excess is established. The obtained experimental data are analyzed on the basis of concepts concerning the dissociative mechanism of migration of Cr atoms in the GaAs crystal lattice; according to this mechanism, the diffusion coefficient depends heavily on the concentration of Ga vacancies.
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  • A Study of the Process of Decomposition of Supersaturated GaAs: Fe Solid Solution by Scanning Probe Microscopy

    Khludkov, S. S.   Prudaev, I. A.   Novikov, V. V.   Tolbanov, O. P.   Ivonin, I. V.  

    Using an atomic-force microscope, the decomposition of the supersaturated solid solution of iron-doped GaAs (GaAs: Fe) is studied. GaAs: Fe samples were obtained in the course of high-temperature diffusion of Fe into GaAs and subsequent annealing at a temperature by 200 degrees C below the doping temperature. The measurements are performed for transverse cleavages along the cleavage planes of the GaAs:Fe wafers. It is shown that, during annealing of the GaAs: Fe samples, the supersaturated alloy decomposes with the formation of particles of the second phase from similar to 50 nm to similar to 1 mu m in size. The particles of the second phase possess ferromagnetic properties at room temperature.
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  • SUBSTRATE(S) ENCLOSED BY ENERGY ABSORBING MATERIAL(S)

    Electronic devices comprising a substrate at least partially enclosed by an energy absorbing material are disclosed herein. The energy absorbing material can integrally or removably attach to the substrate. The substrate can be carbon fiber, glass, ceramic, metal, composite, or mixtures thereof. The energy absorbing material can comprise at least one thermoplastic polymer.
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