This baked confectionery includes, per a total of 100 parts by mass of wheat flour and an insoluble-dietary-fibre-containing flour, a total of 20-65 parts by mass of fat having a melting point of not more than 20˚C and fat having a melting point in the range 25-50˚C. The baked confectionery satisfies the following conditions: (a) that the proportion, expressed as a mass ratio, of the content (B) of the wheat flour to the content (A) of the insoluble-dietary-fibre-containing flour be B/A = 50/50 to 80/20; (b) that the proportion, expressed as a mass ratio, of the content (D) of the fat having a melting of not more than 20˚C to the content (C) of the fat having a melting point in the range 25-50˚C be D/C = 1/7 to 7/1; and (c) that the gliadin content be at least 2.4 mass%.
In order to develop the in situ cleaning process using chlorine trifluoride gas for a silicon carbide epitaxial reactor, the etching conditions and process were studied for removing the silicon carbide film formed on the susceptor. The formed silicon carbide film consisted of stacked layers of a polycrystalline 4H-like silicon carbide film, a polycrystalline 3C-silicon carbide film and a silicon-rich silicon carbide film. The average etching rate of the formed film was about four times higher than the silicon carbide coating film of the carbon susceptor. By adjusting the etching temperature to less than 330 degrees C, the formed silicon carbide films could be removed without significant damage to the susceptor. (C) The Author(s) 2015. Published by ECS. All rights reserved.
We have grown InN on 4H-SiC (0001) substrates with various off-angles by RF-N-2 plasma molecular beam epitaxy (RF-MBE). Scanning electron microscope observation revealed that InN films grown on 4H-SiC (0001) substrates with off-angles of 4 degrees and 8 degrees are very smooth and that there are no voids which have often observed for InN epitaxial layers. X-ray diffraction reciprocal space maps for InN grown on 4H-SiC (0001) showed that the c-axes of InN grown on 4H-SiC 4 degrees and 8 degrees off substrates are inclined by 0.35 degrees and 0.8 degrees, respectively, toward the misorientation of the substrate while the c-axis of InN is parallel to that of 4H-SiC for the on-axis substrate. Strong PL peak was observed from InN grown on 4 degrees off substrate at 0.68 eV at 15 K. The PL peak was clearly observed even at room temperature and simply shifted to lower energies with increasing temperature. The difference in the PL peak energy between at 15 K and 300 K was 20 meV, which is reasonable taking into account the difference in the thermal coefficients of InN and SiC. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
To outline the hopping conduction range, the electrical characteristics of CVD-grown heavily Al-doped 4H-SiC thick epilayers (2.0 x 10(19)-4.0 x 10(20) cm(-3)) were investigated in a wide temperature regime (20-900 K). It is found that, below 100 K, hopping conduction dominates the carrier transport for all epilayers, and the corresponding hopping conduction activation energy shows a maximum of similar to 30 meV at around 1.1 x 10(20) cm(-3). With increasing doping level, the temperature dependence of resistivity evolves and finally obeys the similar to 1/T-1/4 law in the entire temperature regime, which gives direct evidence of variable-range hopping conduction. (C) 2015 The Japan Society of Applied Physics
We have developed a computer simulation that can reproduce giant step bunching (GSB) that takes into account both the cluster effect and the Schwoebel effect. When using our simulation to investigate the conditions for generating GSB, we found that, for GSB to occur, there exists a threshold value of the surplus flux rate of Sior C-source gases not contributing to growth, which in turn depends on the flux rate of each source gas: or, more specifically, the boundary between the presence and absence of GSB. This boundary does not depend on the off-angle of the substrate. We have also found a mechanism that explains the occurrence of wavy surface morphology.
Ishida, Yuuki
Takahashi, Tetsuo
Okumura, Hajime
Arai, Kazuo
Yoshida, S.
We have developed a new chemical vapor deposition (CVD) system that is capable of a high growth rate of over 100 mum/h with good uniformities of thickness and carrier concentration. In this CVD system, the process gases contribute efficiently to epitaxial growth. In a demonstration of the abilities of the CVD system, we achieved an average growth rate of 140 mum/h, a thickness uniformity of 3.9%, and a carrier concentration uniformity of 8.9% in a 2-inch wafer, without degradation of the crystallinity.
This study investigates the shape transformation of 4H-SiC microtrenches that occurs during high-temperature hydrogen annealing, which is used to improve growth on such prepared substrates. The trenches have micron-sized widths and depths and were annealed in hydrogen ambient at temperatures of 1400-1600 degrees C for 30-3600 s. After hydrogen annealing, cross-sectional images of the samples were obtained by scanning electron microscopy (SEM). These SEM images reveal that the top and bottom trench corners become rounded during hydrogen annealing. The top trench corners become rounded by an etching reaction, whereas the bottom trench corners become rounded as a result of a regrowth phenomenon that involves the transportation of atoms. This study analyzes the mechanism of these transformations in terms of Mullins' continuum model. The results suggest that the evaporation-condensation process is dominant in the case of SiC annealing. (c) 2009 The Japan Society of Applied Physics
Ishida, Yuuki
Takahashi, Tetsuo
Okumura, Hajime
Arai, Kazuo
Kimura, K.
Nakamura, K.
Yoshida, Sadafumi
We have proposed a novel model of hydrogen etching of SiC based on thermal equilibrium and have confirmed the validity of our model through the analysis of H 2 etching experiments. The experimental results obtained showed that the etching rate is expressed by a linear equation with the H 2 flow rate, by an exponential function with the reciprocal of the temperature and by a power law with the pressure. These results agree well with the theoretical behaviors derived from our model
The effects of orally administered sphingomyelin-based liposomes (SM-lipo) on muscle function were investigated in senescence-accelerated mice prone 1 (SAMP1) for the purpose of protection against or treatment of sarcopenia. SM-lipo were prepared by thin lipid-film hydration followed by extrusion. Their spherical shape was observed by transmission electron microscopy. The obtained liposomes were stable in gastric liquid and intestinal fluid models as well as in water. In in vitro tests liposomalization of sphingomyelin significantly increased its transport into human intestinal epithelial Caco-2 cells. In addition, SM-lipo up regulated the proliferation of murine C2C12 myoblasts compared with free sphingomyelin or phosphatidylcholine-based liposomes (PC-lipo). Finally, SM-lipo orally administered to SAMP1 for 10 weeks significantly increased quadriceps femoris weight and extended swimming time until fatigue compared with PC-lipo. In conclusion, these findings indicate that SM-lipo are well absorbed into the body and improve muscle weakness caused by senescence.
The difference between atmospheric pressure (AP)CVD and low pressure (LP)CVD in 3C-SiC heteroepitaxial growth on Si(001) surfaces has been investigated. It is found that the difference in the growth mode results in a difference in the secondary nucleation rate. It is suggested that the increase of the secondary nucleation rate causes 2D island growth on {111} faces, and that these 2D islands play an important role in the process of elimination of planar defects. A simulation of the homogeneous chemical reaction in the gas phase suggests that the origin of the difference in the secondary nucleation rate can be attributed to the difference in the mole fraction of atomic hydrogen.
The Al memory effect during the growth of Al-doped 4H-SiC by the hot-wall chemical vapor phase epitaxy method was investigated. To suppress unintentional incorporation of Al impurities during succeeding growth, a technique was developed by employing HCl-assisted "site-competition" growth. Three methods of introducing HCl, namely, HCl flushing before growth, HCl addition during growth, and the combination of the two preceding methods, have been performed and the Al suppression effects corresponding to the input C/Si ratio were studied separately. It is found that lowering the C/Si ratio reduces Al incorporation for all methods of introducing HCl and using the combination of HCl flushing and HCl addition is highly effective. Optimizing growth rate, temperature, and pressure can further improve Al suppression efficiency; thus, a highly abrupt change in Al distribution between Al-doped and undoped epilayers with Al concentration differences of more than five orders of magnitude was obtained, e.g., a steep change from 10(20) to 10(14)cm(-3). (C) 2014 The Japan Society of Applied Physics
We have investigated the H-2 etching and growth conditions causing giant step bunching (GSB) in 4H-SiC homoepitaxial growth on 8 degrees off-axis substrates by a chemical vapor deposition method and found that GSB does not occur during H-2 etching under a wide range of experimental conditions, whereas GSB occurs during epitaxial growth at extremely low or high C/Si ratios, i.e., an excessive supply of SiH4 or C3H8. To explain these results, we have proposed a model taking into account the effect of Si or C cluster formation called "the cluster effect" model. We have shown that the cluster effect model can explain well our experimental result of GSB occurrence or nonoccurrence during etching and homoepitaxial growth of 4H-SiC. (C) 2015 The Japan Society of Applied Physics
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