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Now showing items 1 - 16 of 28

  • Thiopyran derivatives

    An intermediate represented by the following formula (XVIII), ##STR1##;(wherein R.sub.1 is an alkyl group which may be substituted, an aromatic
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  • Benzothiazine derivative

    Disclosed are benzothiazine derivatives represented by the following formula (I): ##STR1##;wherein the dashed line indicates the presence or absence of a bond; Z;in which R.sub.1 and R.sub.2 individually represent alkyl, aralkyl or the
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  • Pyrroloazepine derivatives

    A method for treating a circulatory disease or condition in a mammal, which entails administering to the mammal an effective amount of a compound of the formula (I) or a pharmaceutically acceptable salt thereof: ##STR1##;wherein;wherein R.sub.1 represents C.sub.1 -C.sub.8 alkyl, C.sub.3 -C.sub.8
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  • Thiopyran derivatives

    A thiopyran derivative represented by the following formula (I) or (I'), or the salt thereof. ##STR1## wherein A is S or --CH.dbd.CH--; the dotted line indicates that the bond may be either present or absent; Z and Z' are typically ##STR2## L is an ethylene or trimethylene group; Y is CH or N; n is 2; B is a carbonyl group; m is 0 or 1; D is a phenyl group; and E.sub.1 and E.sub.2 are hydrogen atoms. These compounds exhibit a strong serotonin-2 blocking action and highly safe. Some compounds also exhibit an .alpha..sub.1 -blocking action and therefore are useful as an antihypertensive agent with less side effects. Thus, the thiopyran derivatives are useful as drugs for the treatment of circulatory diseases in general such as hypertension, ischemic heart disease, cerebrovascular disturbance, and peripheral circulatory disturbance.
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  • Method of manufacturing semiconductor device

    In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950.degree. C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.
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  • Structure of vehicle body of a vehicle

    A foot-rest support plate for a vehicle in which the support plate is separate from a dashboard and a floor panel. The support plate is comprised of a vertical plate portion contacting a rear surface of the dashboard, a rearward-declining plate portion connected to a lower end of the vertical plate portion which faces the bottom of the feet of an occupant, and a horizontal plate portion connected to a lower end of the declining plate portion and contacting an upper surface of the floor panel. The vertical plate portion is coupled to the dashboard, the horizontal plate portion is coupled to the floor panel, and the declining plate portion is not coupled to the vehicle body.
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  • Soil fumigant preparations

    Described are a stick-shaped soil fumigant preparation and an application method therefor. The fumigant preparation comprises a water-soluble and/or biodegradable film and a soil sterilizer and/or nematocide hermetically packed in the form of a stick with the film. The soil sterilizer and nematocide are each in a liquid form at room temperature.;The soil fumigant preparation according to the present invention remains
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  • Benzothiazine derivative

    Disclosed are benzothiazine derivatives represented by the following formula (I): ##STR1## The benzothiazine derivatives (I) and their salts according to the present invention have strong serotonin-2 blocking action, have excellent selectivity to this action against .alpha..sub.1 blocking action and have high safety. Accordingly, the present invention has made it possible to provide pharmaceuticals making use of antagonistic action against serotonin-2 receptors, for example, therapeutics for various circulatory diseases such as ischemic heart diseases, cerebrovascular disturbances and peripheral circulatory disturbances.
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  • Process for preparing 1-substituted pyrrole-3-carboxylic acid derivatives

    A simple and industrially viable process for preparing a 1-substituted pyrrole-3-carboxylic acid derivative of formula (I) is provided. The process comprises reacting a compound of formula (II), a compound of formula (III), and an acid anhydride according to the following reaction, ##STR1## wherein R.sub.1 and R.sub.2 individually represent an alkyl, aralkyl, or aryl group.
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  • Enhancement-type semiconductor having reduced leakage current

    A semiconductor device having an enhancement-type MOS structure which can prevent large leakage current is disclosed. A high-concentration region for threshold-value regulation use formed in a channel region below a gate electrode in an enhancement-type transistor is caused to be contiguous with a source region and not contiguous with a drain region. Herein, the distance between the high-concentration region and the drain region is set so as to preclude the depletion layer extending from the drain region side from reaching the high-concentration region. Therefore, the electrical field in the depletion layer does not become the critical field which causes avalanche or Zener breakdown, and so leakage current can be caused to be reduced.
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  • Semiconductor integrated circuit

    A semiconductor integrated circuit providing a novel patterned multilayered wiring structure to enhance the degree of the integration of the circuit and the speed of the operation. The structure includes at least one first interlaid electric insulator film on the wall of the contact portion of a first wiring layer and its vicinity, a second interlaid electric insulator film, which reacts distinctly to the etching process utilized from the first interlaid electric insulator film, is provided on a substrate.
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  • Multi-piston swash plate type compressor with internal lubricating arrangement

    A multi-piston swash plate type compressor with an internal lubricating arrangement for an air conditioning system used in a vehicle such as an automobile comprises a cylinder block body having a swash plate chamber formed therein for receiving a swash plate, and cylinder bores formed therein for receiving pistons. The compressor has a suction chamber which is fed with a refrigerant including a lubrication oil from an evaporator of the air conditioning system, and a discharge chamber which feeds the compressed refrigerant to a condenser of the air conditioning system. The suction and discharge chambers are communicated with each of the cylinder bores through valves. Passages are formed in the cylinder block body for feeding the refrigerant from the swash plate member to the suction chamber in such a manner that the refrigerant flow is guided to positively lubricate movable parts included in the cylinder block body as a component element of the compressor.
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  • Swash-plate-type compressor with a muffling arrangement

    A multi-cylinder swash-plate-type compressor having a combined cylinder block closed on both axial ends by front and rear housing and provided therein with a reciprocative piston mechanism, for sucking, compressing, and discharging a refrigerant gas, and a connecting flange, from which the refrigerant gas after compression is sent out toward a cooling circuit. The connecting flange defines a muffling chamber in cooperation with a circumferential section of the combined cylinder block for suppressing the pulsation in discharge pressure of the refrigerant gas. The compressor further has a pair of mutually opposed gas outlets arranged adjacent to and downstream of the muffling chamber so that two streams of the refrigerant gas after compression collide, weakening the pulsation in the discharge pressure of the refrigerant gas.
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  • Swash-plate-type compressor having suction and discharge damping chambers

    A multi-cylinder swash-plate-type compressor having a combined cylinder block closed on both axial ends by front and rear housings and provided therein with a reciprocative piston mechanism for sucking, compressing, and discharging a fluid, such as a refrigerant gas. The combined cylinder block is provided with a mounting bracket on the outer circumference thereof and suction and discharge ports formed in the outer circumference at positions adjacent to the mounting bracket. The compressor further has damping chambers arranged adjacent to the suction and discharge ports for suppressing pulsation in suction and discharge pressures of the refrigerant gas during the operation of the compressor. The damping chambers have considerable volumes and cross-sectional area.
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  • Composite oxyalkoxides and derivatives thereof

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  • Adhesion and Friction Properties of Fluorocarbon Polymer Thin Films Coated onto Metal Substrates

    Iwamori   Satoru  

    Poly(tetrafluoroethylene)(PTFE) thin films were coated onto metal substrates by a spin coat apparatus, vacuum evaporator and RF sputtering, and their adhesion and friction properties evaluated. PTFE thin film coated onto nickel-titanium (Ni-Ti) substrate by spin coating showed a low friction coefficient, however pull strength between the thin film and Ni-Ti substrate was low. In order to increase the pull strength, PTFE and poly(vinyl alcohol) (PVA) composite thin films were introduced between the PTFE thin film and Ni-Ti substrate by spin coating. PTFE thin film was also coated onto SUS302 substrate by a vacuum evaporator. This PTFE thin film showed poor adhesion to the SUS302 substrate. The adhesion was enhanced by heating of the substrate during the evaporation. In addition, a PTFE and ethylene vinyl alcohol (EVOH) composite thin film showed higher adhesion strength than that of the PTFE thin film. Poly(fluorocarbon) thin films were prepared by a conventional RF sputtering with PTFE target. These thin films showed a higher friction coefficient than that of the pristine PTFE. Molecular structures of the poly(fluorocarbon) thin films prepared by RF sputtering were different from the pristine PTFE. This difference may have influenced the friction coefficient. The pull strength of metal thin films such as gold, copper, nickel and aluminum deposited on the sputtered PTFE thin films by vacuum evaporation was measured. The nickel thin film adhered to the PTFE thin film most strongly of all the thin films.
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