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Now showing items 33 - 35 of 35
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SPIE Proceedings [SPIE 16th International Workshop on Physics of Semiconductor Devices - Kanpur, India (Monday 19 December 2011)] 16th International Workshop on Physics of Semiconductor Devices - Device improvement and circuit performance evaluation of complete SiGe double gate tunnel FETs
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[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-k dielectrics
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A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope
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