Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
home > search

Now showing items 1 - 16 of 63

  • Differentially Graded Junctionless Transistor

    Surana, Neelam   Ghosh, Bahniman   Akram, M. W.   Tripathi, Ball Mukund Mani  

    In this work, we propose a differentially graded double-gate junctionless transistor (DGJLT) and compare it with a uniformly doped DGJLT in respect of on-current, off-current and I-ON/I-OFF ratio. In our investigation, we found that the differentially graded DGJLT shows significant improvement in device performance and hence it may prove to be a better switching device when compared to uniformly doped DGJLT. In this paper, we also show the electron concentration in off and on state for both the devices and find that differentially graded DGJLT has better control over the channel.
    Download Collect
  • Temperature effect on hetero structure junctionless tunnel FET

    Rahi, Shiromani Balmukund   Ghosh, Bahniman   Bishnoi, Bhupesh  

    For the first time, we investigate the temperature effect on AlGaAs/Si based hetero-structure junction-less double gate tunnel field effect transistor. Since junctionless tunnel FET is an alternative substitute device for ultra scaled deep-submicron CMOS technology, having very good device characteristics such as an improved subthreshold slope (< 60 mV/decade at 300 K) and very small static leakage currents. The improved subthreshold slope and static leakage current confirms that it will be helpful for the development of future low power switching circuits. The 2-D computer based simulation results show that OFF-state leakage current is almost temperature independent for the proposed device structure.
    Download Collect
  • Effect of defects on the electronic properties of WS2 armchair nanoribbon

    Ghosh, Bahniman   Gupta, Aayush  

    We have studied the WS2 armchair nanoribbon with various defects like vacancy, edge roughness, twist, turn and ripple and compared how the bandgap changes due to such defects with the bandgap of a nanoribbon with no defects. Materials like WS2 and other transition metal dichalcogenides (MX2) have a graphene like layered structure with hexagonal rings and have properties that have attracted a lot of interest. Hence it is essential to study the changes in the band structure of the nanoribbon of WS2 due to the inclusion of defects like vacancy, rough edge, wrap, ripple and twist for making any device based on WS2.
    Download Collect
  • First principle defect study of MoSe2 field effect transistor

    Ghosh, Bahniman   Kishor, Naval  

    In this study, we have investigated the impact of various defects and deformations such as rough edge, twist, wrap (tube) and ripple on the NDR (negative differential resistance) behavior of a MoSe2 armchair (ANR) MOSFET. We have studied the current voltage characteristics of the device under these deformations along with the transmission spectrum of the ANR channel. Change in the NDR region and peak-to-valley ratio has been observed for each deformation, and significant changes were observed in each case.
    Download Collect
  • Effects of non-uniform doping on junctionless transistor

    Mondal, Partha   Ghosh, Bahniman   Bal, Punyasloka   Akram, M. W.   Salimath, Akshaykumar  

    In this paper, we study the effects of non-uniform channel doping on junctionless transistor (JLT) using 3D quantum simulations. The JLT devices require a uniformly doped ultrathin channel. Although we take uniform doping for study, in practice, it will be technologically difficult to obtain. For technological reason, after thermal annealing, the impurity profile in semiconductor device becomes uniform along lateral channel direction and non-uniform along vertical direction. Here, we show that this directly affects the short channel behaviour and reduces on-current.
    Download Collect
  • First principle defect study of MoSe2field effect transistor

    Ghosh, Bahniman   Kishor, Naval  

    In this study, we have investigated the impact of various defects and deformations such as rough edge, twist, wrap (tube) and ripple on the NDR (negative differential resistance) behavior of a MoSe2 armchair (ANR) MOSFET. We have studied the current voltage characteristics of the device under these deformations along with the transmission spectrum of the ANR channel. Change in the NDR region and peak-to-valley ratio has been observed for each deformation, and significant changes were observed in each case.
    Download Collect
  • Voltage assisted control of spin-transfer nano-oscillators

    Ghosh, Bahniman   Solanki, Gaurav  

    The spin-transfer nano-oscillator (STNO) has recently acquired a huge amount of research interest, due to its promising easy tunability along with the miniature size. The output frequency control of an STNO through magnetic field and current has been examined almost to its full extent; however, there are issues that still need to be addressed. Here, we propose a novel way of voltage control of the output frequency of an STNO, and alongside reducing its power requirement.
    Download Collect
  • Domain wall oscillators

    Ghosh, Bahniman   Solanki, Gaurav  

    Domain wall (DW) oscillators have recently acquired a huge amount of research interest, due to their promising easy tunability along with the miniature single-layered structure. The output frequency control of DW oscillator through magnetic field and current has been studied in detail; but, there are issues yet to be addressed. Here, we propose several designs of DW oscillators and try to address some issues of control, output frequency and input power.
    Download Collect
  • Domain wall oscillators

    Ghosh, Bahniman   Solanki, Gaurav  

    Domain wall (DW) oscillators have recently acquired a huge amount of research interest, due to their promising easy tunability along with the miniature single-layered structure. The output frequency control of DW oscillator through magnetic field and current has been studied in detail; but, there are issues yet to be addressed. Here, we propose several designs of DW oscillators and try to address some issues of control, output frequency and input power.
    Download Collect
  • A Novel Level Algorithm for Global Optimization

    Ghosh, Bahniman   Chakravarty, Diptarka   Salimath, Akshaykumar  

    In this paper we discuss an idea of levels, which is a hierarchical nested local search based on solutions of existing global optimization approach. We implement the idea by designing an algorithm that treats random sampling, ant colony optimization algorithms for continuous domain and quantum ant colony optimization as its parent algorithms. We compare and study the results of the newly designed algorithms with their respective parent algorithms for similar test setups on certain benchmark test functions.
    Download Collect
  • Spin Transport in Lithiated Silicene (Silicel)

    Bishnoi, Bhupesh   Ghosh, Bahniman  

    In this article, we have investigated spin polarized electronic transport in Lithiated Silicene (silicel) using semi-classical Monte-Carlo approach. Monte Carlo simulations are used to model spin transport along with spin density matrix calculations in the semiconductor devices. Dephasing of the spin vectors in Lithiated Silicene is due to D'yakonov-Perel (DP) and Elliott-Yafet (EY) relaxation mechanisms. In this article, we theoretically studied spin polarized electronic transport along the length of the Lithiated Silicene structure and the spin dephasing length is estimated to be in the range of 2 um for Lithiated Silicene. Next, we investigated the ensemble averaged spin vector variation along the length of the Lithiated Silicene with varying temperature. We observe a negligible variation in the spin dephasing length in the temperature range of 4 K to 373 K. As the temperature increases from 1000 K to 10000 K, we find a decrease in the spin dephasing length. In our study, we find that Lithiated Silicene is a promising candidate for next generation spintronics devices.
    Download Collect
  • A Novel Level Algorithm for Global Optimization

    Ghosh, Bahniman   Chakravarty, Diptarka   Salimath, Akshaykumar  

    In this paper we discuss an idea of levels, which is a hierarchical nested local search based on solutions of existing global optimization approach. We implement the idea by designing an algorithm that treats random sampling, ant colony optimization algorithms for continuous domain and quantum ant colony optimization as its parent algorithms. We compare and study the results of the newly designed algorithms with their respective parent algorithms for similar test setups on certain benchmark test functions.
    Download Collect
  • Modelling Degradation in Organic Solar Cell

    Bhuktare, Swapnil   Ghosh, Bahniman   Bishnoi, Bhupesh  

    A model based upon numerical simulation is developed for the degradation of organic solar cells. Carrier mobility, generation rate and barrier heights for injection at contacts were assumed to vary with time. Current-Voltage (J-V) characteristics were modelled at different instants of time to get the time variation of those parameters and the results were used to model the degradation characteristics.
    Download Collect
  • DESIGN OF A MULTI-LAYERED QCA CONFIGURABLE LOGIC BLOCK FOR FPGAs

    GHOSH, BAHNIMAN   CHANDRA, J. SIVA   SALIMATH, AKSHAYKUMAR  

    In this paper, a Multi-layered configurable logic block (CLB) unit for field programmable gate arrays (FPGAs) is proposed based on quantum-dot cellular automata (QCA) technology. The design is made in multiple layers which help to process information simultaneously, in different layers. Various components of CLB like (4 times 16) Decoder, Memory units, Multiplexers and RS-Flip flops are all designed in multiple layers using higher input majority gates to reduce the cell count and latency compared to previous designs. QCA Designer tool is used to design and simulate the model. The Coherence vector approximation is used for obtaining simulation results.
    Download Collect
  • Junctionless Tunnel Field Effect Transistor

    Ghosh, Bahniman   Akram, Mohammad Waseem  

    In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor (TFET). In this structure, the advantages of JLFET and TFET are combined together. The simulation results of JL-TFET with high-k dielectric material (TiO2) of 20-nm gate length shows excellent characteristics with high I ON/I OFF ratio (~6times10 8), a point subthreshold slope (SS) of ~38 mV/decade, and an average SS of ~70 mV/decade at room temperature, which indicates that JL-TFET is a promising candidate for a switching performance.
    Download Collect
  • Junctionless Tunnel Field Effect Transistor

    Ghosh, Bahniman   Akram, Mohammad Waseem  

    In this letter, a double-gate junctionless tunnel field effect transistor (JL-TFET) is proposed and investigated. The JL-TFET is a Si-channel heavily n-type-doped junctionless field effect transistor (JLFET), which uses two isolated gates (Control-Gate, P-Gate) with two different metal work-functions to behave like a tunnel field effect transistor (TFET). In this structure, the advantages of JLFET and TFET are combined together. The simulation results of JL-TFET with high-k dielectric material (TiO2) of 20-nm gate length shows excellent characteristics with high I-ON/I-OFF ratio (similar to 6 x 10(8)), a point subthreshold slope (SS) of similar to 38 mV/decade, and an average SS of similar to 70 mV/decade at room temperature, which indicates that JL-TFET is a promising candidate for a switching performance.
    Download Collect
1 2 3 4

Contact

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

Submit Feedback