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Now showing items 1 - 16 of 68

  • MAGNETRON DRIVING MECHANISM, MAGNETRON ASSEMBLY, AND REACTION CHAMBER

    A magnetron driving mechanism comprises a driving assembly, a transmission assembly, a rotating assembly, and a limiting assembly. The driving assembly is used to drive both the rotating assembly and the transmission assembly to rotate clockwise or counterclockwise around a first rotation axis (31). The rotating assembly is connected to a magnetron (34). The driving assembly drives both the rotating assembly and the magnetron (34) via the transmission assembly to rotate clockwise or counterclockwise around a second rotation axis (32). The second rotation axis and the first rotation axis are parallel to each other. The limiting assembly is used to block the clockwise or counterclockwise rotation of the rotating assembly respectively, so as to define the magnetron (34) at different radii of the first rotation axis. Further provided are a magnetron assembly and a reaction chamber.
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  • CARRYING DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS

    Provided are a carrying device and a semiconductor processing apparatus. The carrying device comprises a heating dish and a cooling dish, wherein the heating dish and the cooling dish are spaced apart, and a heat insulation region is formed between the heating dish and the cooling dish. Not only can the carrying device of the present invention avoid the stopping, caused by an excessively high temperature, of a process, but same can also can maintain the uniformity and stability of the temperature throughout the whole process, thereby providing a qualified and stable processing temperature for a workpiece to be machined, and finally obtaining a better processing result.
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  • PROCESS CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS

    Disclosed are a process chamber and a semiconductor processing apparatus. The process chamber comprises: a chamber body (1), an upper electrode plate (3), a heat source (13) arranged at the top in the chamber body, and a substrate (2) arranged at the bottom in the chamber body. The heat source is arranged opposite a substrate area, wherein a gas transmission channel is arranged in the upper electrode plate, and the upper electrode plate can move between a pre-cleaning process position and a degassing process position; where the upper electrode plate is located in the pre-cleaning process position, the upper electrode plate is located between the heat source and the substrate, and the upper electrode plate is directly opposite the substrate area, so as to carry out a pre-cleaning process on a workpiece (8) to be processed with the help of a process gas from the gas transmission channel; and where the upper electrode plate is located in the degassing process position, the upper electrode plate deviates from the substrate area, and the heat source is directly opposite the substrate area, so as to carry out a degassing process on the workpiece to be processed. The process chamber and the semiconductor processing apparatus can increase the process gas utilization rate and the pre-cleaning effect.
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  • PROCESSING CHAMBER AND SEMICONDUCTOR DEVICE

    Provided are a processing chamber and a semiconductor device. The processing chamber comprises a chamber body (100), the chamber body (100) being provided with at least two processing sub-chambers (101, 102), the at least two processing sub-chambers communicating. By means of providing at least two processing sub-chambers on the chamber body and enabling the at least two processing sub-chambers to communicate, each processing sub-chamber can simultaneously process wafers when the internal process environment is the same, thereby improving the process efficiency and the device capacity.
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  • DEGASSING CHAMBER AND SEMICONDUCTOR PROCESSING DEVICE

    A degassing chamber and a semiconductor processing device. The degassing chamber comprises: a chamber (1) and a substrate container (2). A substrate transferring opening (11) is provided at a side wall of the chamber (1). The substrate container (2) can be moved in the chamber (1) and along a vertical direction. The degassing chamber further comprises a heating component (3) comprising a first light source component (31) and a second light source component (32). The substrate transferring opening (11) serves as a boundary to divide the chamber (1) into a first chamber (12) and a second chamber (13). The first light source component (31) is located in the first chamber (12), and the second light source component (32) is located in the second chamber (13). The first light source component (31) and the second light source component (32) are configured to heat a substrate in the substrate container (2). The degassing chamber is employed to heat, using the light source components, a substrate in the substrate container, regardless of the substrate being located at an upper area or a lower area of the substrate transferring opening, thereby ensuring a uniform process temperature of substrates during a degassing process or a transferring process.
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  • DEPOSITION RING AND CHUCK ASSEMBLY

    A deposition ring (50) and a chuck assembly using the same. The deposition ring (50) is used in the chuck assembly in cooperation with a pressure ring (60) and a base (40), and comprises: an annular body (51) having an upper surface (52) and a lower surface (53); and an annular groove (55) formed on the upper surface (52). The deposition ring (50) further comprises a clamping part (58) for clamping onto the base (40). By clamping the deposition ring to the base, the risk of displacement and detachment of the deposition ring can be reduced, increasing the effective working time of the deposition ring and the chuck assembly.
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  • BEARING BASE AND PRE-CLEANING DEVICE

    A bearing base (1) and a pre-cleaning device. The bearing base (1) is used for bearing a workpiece to be processed (2); a first recessed portion (11) is formed on the bearing base (1); the workpiece to be processed (2) can be received in the first recessed portion (11); the bottom wall of the first recessed portion (11) is provided with a second recessed portion (12); the second recessed portion (12) is used for reducing an etching speed of a central area of the workpiece to be processed. The bearing base (1) and the pre-cleaning device not only can weaken an edge electric field of the workpiece to be processed (2), but also can weaken voltages at the central area, such that etching uniformity of the workpiece to be processed (2) can be effectively improved, and a better process result can be obtained.
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  • Aspirin induces oncosis in tumor cells

    Wang, Lu   Mai, Zihao   Zhao, Mengxin   Wang, Bin   Yu, Si   Wang, Xiaoping   Chen, Tongsheng  

    In contrast to the well-known anti-tumor mechanisms of aspirin in inducing apoptosis or autophagy, we here for the first time report oncosis induced by aspirin in tumor cells. In vitro and in vivo analysis showed that aspirin induced compromised Bcl-XL level and subsequent ATP depletion. Overexpression of CFP-Bcl-XL in Hela and A549 cells observably inhibited aspirin-induced ATP depletion and almost completely inhibited the aspirin-induced cells bubbling, while pharmacological inhibition of endogenous Bcl-XL activity by ABT-737 remarkably promoted aspirin-induced ATP depletion and cells bubbling, suggesting the key inhibitory role of Bcl-XL in aspirin-induced oncosis. Overexpression of Bax/Bad significantly promoted aspirin-induced oncosis. In addition, cells cultured in a glucose-free medium with low ATP level exhibited higher percentage of bubbling cells than the cells cultured in a glucose medium with high ATP level under aspirin treatment, indicating the important role of ATP depletion in aspirin-induced oncosis. Furthermore, caspase-3 was demonstrated to be not involved in aspirin-induced oncosis. Animal studies showed that aspirin treatment significantly inhibited tumors growth, but did not induce toxicities to mice. Collectively, aspirin inhibits tumors growth in mice and induces oncosis in which the compromised Bcl-XL and intracellular ATP depletion play a dominant role, which provides insights into the therapeutic strategy of aspirin in oncology.
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  • DEGASSING METHOD, DEGASSING CHAMBER AND SEMICONDUCTOR PROCESSING EQUIPMENT

    Provided are a degassing method, a degassing chamber and semiconductor processing equipment. The degassing method comprises: step S1: heating the degassing chamber, so that the internal temperature therein reaches a preset temperature and is kept constant at this preset temperature; and step S2: introducing a substrate to be degassed into the degassing chamber, and taking the substrate out of same after heating for a preset period of time. The degassing method provided by the present invention can not only improve the temperature uniformity of the same batch of substrates and different batches of substrates, but can also achieve the free moving-in and moving-out of the substrate to be degassed, thereby increasing the production capacity of the equipment.
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  • COMPRESSION RING AND SEMICONDUCTOR PROCESSING EQUIPMENT

    Disclosed are a compression ring and a semiconductor processing equipment. The compression ring comprises a compression ring body (11, 21) on the inner ring wall of which a plurality of fixing portions (121) and a plurality of shielding portions (122) are provided at intervals in circumferential direction thereof, wherein a plurality of the fixing portions (121) and a plurality of the shielding portions (122) are arranged alternately, the fixing portions (121) serving to compress a first edge area of the upper surface of a wafer (13, 24) and the shielding portions (122) serving to shield a second edge area of the upper surface of the wafer (13, 24). The above-described compassion ring can solve the problem that metal plating coating is deposition on the side or back side of the wafer (13, 24), so that the process results can be improved.
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  • Board Ancestral Diversity and Firm-Performance Volatility

    Giannetti, Mariassunta   Zhao, Mengxin  

    We proxy for board members' opinions and values using directors' ancestral origins and show that diversity has costs and benefits, leading to high performance volatility. Consistent with the idea that diverse groups experiment more, firms with ancestrally diverse boards have more numerous and more cited patents. In addition, their strategies conform less to those of the industry peers. However, firms with greater ancestral diversity also have more board meetings and make less predictable decisions. These findings suggest that diversity may lead to inefficiencies in the decision-making process and conflicts in the boardroom.
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  • PRECLEANING CAVITY AND PLASMA PROCESSING APPARATUS

    A precleaning cavity (100, 200, 300) and a plasma processing apparatus, comprising a cavity body (20) and medium windows (21, 21¡¯) provided at the top of the cavity body (20), a base (22) and a process assembly (24) surrounding the base (22) are provided inside the precleaning cavity (100, 200, 300), and the base (22), the process assembly (24) and the medium windows (21, 21¡¯) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20), which is located below the base (22), is used as a loading and unloading sub-cavity (202), the precleaning cavity (100, 200, 300) further comprises a gas intake device (32), and the gas intake device (32) comprises a gas inlet (323), the gas inlet (323) being used for directly conveying a process gas into the process sub-cavity (211) from above the process component (24). The precleaning cavity (100, 200, 300) can not only shorten the gas intake path for the process gas, but can also further achieve a desired plasma density on the premise of less process gas introduced therein, which thus can reduce the usage costs.
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  • HEATING CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS

    A heating chamber and semiconductor processing apparatus, the heating chamber comprising: a heating barrel (17) provided in the heating chamber and located above a wafer transfer opening; an annular heating device (15) provided around an inner side of the heating barrel and used to radiate heat from a periphery to an interior of the heating barrel; a wafer box (14) used to carry multiple layers of substrates and having the multiple layers of the substrates arranged and spaced apart along an axial direction of the heating barrel; and a wafer box lifting device (13) used to drive the wafer box to ascend to an interior space defined by the annular heating device, or to descend to a position corresponding to the wafer transfer opening. The heating chamber can heat multiple layers of substrates arranged and spaced apart in a vertical direction in a single operation, thus significantly increasing the number of substrates processed per unit of time, and also guarantees a higher level of temperature uniformity within the substrates and between the substrates, thus improving processing uniformity.
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  • METHOD FOR DEPOSITING ITO THIN FILM AND GAN-BASED LED CHIP

    Disclosed is a method for depositing an ITO thin film. A magnetron sputtering process is used for depositing an ITO thin film. The method comprises the following steps: depositing an ITO buffer layer on the surface of a substrate by using radio frequency and direct current (DC) co-sputtering; and depositing an ITO thin film layer on the surface of the ITO buffer layer by using DC sputtering. Through the radio frequency and DC co-sputtering, damages resulting from bombardment of sputtering particles on the surface of the substrate are effectively reduced. The present invention also provides a GaN-based LED chip, and an ITO transparent electrode of the chip is prepared by using the method for depositing an ITO thin film in the present invention. During deposition of the ITO transparent electrode, because damages resulting from bombardment of sputtering particles on the surface of a GaN substrate are effectively reduced by using the method for depositing an ITO thin film in the present invention, contact resistance between the ITO transparent electrode and the GaN substrate is reduced, the power consumption of the LED chip is lowered, the photoelectric conversion efficiency of the LED chip is increased, and the service life of the LED chip is prolonged.
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  • PROCESS CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS

    Provided in the present invention are a process chamber and a semiconductor processing apparatus. The process chamber comprises at least two reaction compartments, at least two sets of mutually independent air intake systems, and a chip transfer apparatus. The at least two reaction compartments are arranged within the process chamber and are distributed evenly in the circumferential direction thereof, and each reaction chamber constitutes therein an independent process environment. The air intake systems deliver in a one-to-one correspondence a process gas to the reaction compartments. The chip transfer apparatus is used for transferring chips into the reaction compartments. The process chamber and the semiconductor processing apparatus provided in the present invention allow for two or more processes to be carried out simultaneously in a single process chamber, thus not only is the process chamber structurally compact and small in footprint, but also obviated is the need to redesign the structure of a transfer chamber, thus allowing for reduced costs for manufacturing the apparatus.
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  • PRECLEANING CHAMBER AND SEMICONDUCTOR PROCESSING DEVICE

    Provided are a precleaning chamber and a semiconductor processing device, comprising a chamber body, a top cover, and a carrying unit; the top cover is provided at the top of the chamber body; the carrying unit is provided inside of the chamber body in an area close to the bottom and is used to carry a wafer; an ion filtering unit is provided above the carrying unit in the chamber body, the ion filtering unit being used to filter ions in plasma as plasma moves from the upper portion of the chamber body toward the carrying unit. The precleaning chamber provided in the present invention can filter the ions in plasma as the plasma moves from the upper portion of the chamber body toward the carrying unit, thereby preventing the adverse effect of ions in the plasma on Low-k material and enhancing product performance.
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