[Problem] To acquire energy safely and with high efficiency, to decontaminate radioactive contaminants with high efficiency, or to generate rare metals at a low cost. [Solution] According to "trinucleon theory," in which the atomic nucleus of an element comprises protons, neutrons, and a third nucleon A0 that has linking functionality between α-vesicles, by controlling the number of third nucleon A0sconstituting the atomic nucleus of a substance, energy is acquired from a substance comprising elements having an atomic number of at least 3, and nuclide transformation or nucleosynthesis of a single or plurality of substances is carried out.
A headup display system of high visibility adapted to reflect a display light
from display device (12) in the vicinity of the position of front wind shield (7)
and attain display for driver by the virtual image by the reflected light, which
headup display system comprises masking enlarged part (2) provided by enlargement
of portion of masking part (2a) covering the periphery of the front wind shield
(7) so that not only is the display light from the display device (12) at portion
of the front wind shield (7) corresponding to the masking enlarged part (2) reflected
but also the masking enlarged part (2) functions as a background area of display.
We investigated the short arm of chromosome 3 (3p) for allelic imbalances, including loss of heterozygosity (LOH) and microsatellite instability (MSI) in 40 primary oral squamous cell carcinomas (SCCs) using 10 microsatellite markers and constructed a deletion map for this chromosome arm. We examined 40 primary tumor tissues, 40 corresponding normal tissues, and seven lymph node metastatic tissues. LOH at one or more loci was found in 24/40 (60%) of tumors. Deletion mapping of these tumors revealed at least three discrete, commonly deleted regions on the chromosome arm. Furthermore, we detected MSI in six of those tested cases (15%). We compared our results with the clinicopathologic features. A number of sites displaying LOH at 3p could be detected in early stage lesions, and the frequencies of LOH tended to be higher in later clinical stages. Thus, the frequent LOH was observed from early stage in pTNM classification. An unknown tumor suppressor gene in the genesis of oral squamous cell carcinoma may exist in 3p.
Provided is a head-up display apparatus that reduces troubles caused by separation of a display image in a horizontal direction. A head-up display apparatus (1) is characterized by including: a display source (2) provided inside an instrument panel (6); an opening part (7) which is provided in the instrument panel (6) and through which display light from the display source (2) is discharged; and an opening part cover (5) provided around the opening part (7), wherein at both end parts (51, 53), in the horizontal direction, of the opening part cover (5), the color or the reflectance thereof changes from the opening part sides (52a and 54a) toward the outer sides (52b and 54b).
Disclosed is a bush wherein a coupling pin (40) extending in the axial direction of an inner tube (32) is provided on the inside of the inner tube (32) in the radial direction, an expanded portion (42) which expands outward in the radial direction of the coupling pin (40) is provided on the coupling pin (40), shoulder portions (42a) are provided on both sides of the expanded portion (42) in the axial direction, a bearing (50) which guides the rotation of the coupling pin (40) relative to the inner tube (32) is provided between the inner tube (32) and the expanded portion (42), bent portions (33) which are bent inward in the radial direction of the inner tube (32) are provided on both sides of the inner tube (32) in the axial direction, and elastic members (60) are respectively incorporated in spaces between the bent portions (33) and the shoulder portions (42a).
The difference between atmospheric pressure (AP)CVD and low pressure (LP)CVD in 3C-SiC heteroepitaxial growth on Si(001) surfaces has been investigated. It is found that the difference in the growth mode results in a difference in the secondary nucleation rate. It is suggested that the increase of the secondary nucleation rate causes 2D island growth on {111} faces, and that these 2D islands play an important role in the process of elimination of planar defects. A simulation of the homogeneous chemical reaction in the gas phase suggests that the origin of the difference in the secondary nucleation rate can be attributed to the difference in the mole fraction of atomic hydrogen.
Ultra low on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed. A submicron buried p； gate structure was fabricated by the combination of submicron trench dry etching and epitaxial growth on a trench structure. A drain current IDS reached 8 A at a drain voltage VDS = 1 V, corresponding to a specific on-resistance RonS of 1.1 m椹磋矾cm2 at a current density JD = 200 A/cm2, in the BGSIT with the channel width Wch of 0.9 椹磎. A breakdown voltage VBR was -700 V at a negative gate bias VG = -12 V.A clear saturation IDS-VDS characteristic and slightly high RonS (1.4 m椹磋矾cm2) were observed in the BGSIT with narrow Wch of 0.7 椹磎. RonS increased in proportion to T23 in any channel width due to enhanced phonon scattering.
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