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SEMICONDUCTOR ELEMENT

Abstract(summary):

This semiconductor element is equipped with: an active region, which has a first conductivity-type emitter region that is provided on the upper surface side of a first conductivity-type substrate, a second conductivity-type base region that is provided on the upper surface side of the substrate, and a second conductivity-type collector layer that is provided on the lower surface side of the substrate; and a diode region, which has a second conductivity-type anode layer that is provided on the upper surface side of the substrate, and a first conductivity-type cathode layer that is provided on the lower surface side of the substrate. The cathode layer is separated from the active region in a plan view, and on the upper surface side of the active region, a second conductivity-type high-concentration region having an impurity concentration higher than that of the anode layer is formed.


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