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METHOD FOR POLISHING SILICON CARBIDE SUBSTRATE

Abstract(summary):

The purpose of the present invention is to provide a method for polishing a silicon carbide substrate that allows the silicon carbide substrate to be polished at high speed and warping of the polished silicon carbide substrate surface to be minimized. The present invention is a method for polishing a silicon carbide substrate in which the surface of the silicon carbide substrate to be polished is disposed so as to face an electroconductive surface plate with an electrolyte solution containing a gap-forming material, abrasive grains, and an electrolyte interposed therebetween. At least a part of the surface of the silicon carbide substrate to be polished is electrolytically polished while in contact with the electrolyte solution, the surface of the silicon carbide substrate serving as positive electrode and the electroconductive surface plate serving as negative electrode.


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