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SILICON CARBIDE POWDER AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

Abstract(summary):

Provided is a silicon carbide powder which, when used as a raw material for a sublimation recrystallization method, is capable of improving productivity of a silicon carbide single crystal and of producing a large silicon carbide single crystal (for example, a single crystal wafer) since the powder has a high sublimation rate and the amount of residual silicon carbide that is not sublimed is small. The silicon carbide powder has a Blaine specific surface area of 250 to 1000 cm2/g and the ratio of the silicon carbide powder with a particle size of over 0.70 mm and 3.00 mm or less is 50 volume% or more of the total amount of the silicon carbide powder. By heating and subliming the silicon carbide powder (5) contained in a crucible (1), a single crystal (6) of silicon carbide can be formed on a seed crystal (4) provided on a bottom face portion of an upper lid (3).


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