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Method for forming N-shaped bottom stress liner

Abstract(summary):

Semiconductor devices with n-shaped bottom stress liners are formed. Embodiments include forming a protuberance on a substrate, conformally forming a sacrificial material layer over the protuberance, forming a gate stack above the sacrificial material layer on a silicon layer, removing the sacrificial material layer to form a tunnel, and forming a stress liner in the tunnel conforming to the shape of the protuberance. Embodiments further include forming a silicon layer over the sacrificial material layer and lining the tunnel with a passivation layer prior to forming the stress liner.


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