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Capacitance modeling of 120nm AlGaN/GaN HEMT for microwave and high speed circuit applications

Abstract(summary):

The capacitance-voltage(C-V) and switching characteristics of AlGaN/GaN HEMT has been calculated analytically. The device capacitances and switching parameters; which have been calculated; depends on the basic device parameters and terminal voltages which determine the microwave behavior of a device. The nonvariant nature of this device with drain voltage leads to better device choice for high power microwave frequency.


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