Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Improving the radiation hardness of graphene field effect transistors

Author:
Alexandrou, Konstantinos   Masurkar, Amrita   Edrees, Hassan   Wishart, James F.   Hao, Yufeng   Petrone, Nicholas   Hone, James   Kymissis, Ioannis   


Journal:
Applied Physics Letters


Issue Date:
2016


Abstract(summary):

Ionizing radiation poses a significant challenge to the operation and reliability of conventional silicon-based devices. Here, we report the effects of gamma radiation on graphene field-effect transistors (GFETs), along with a method to mitigate those effects by developing a radiation-hardened version of our back-gated GFETs. We demonstrate that activated atmospheric oxygen from the gamma ray interaction with air damages the semiconductor device, and damage to the substrate contributes additional threshold voltage instability. Our radiation-hardened devices, which have protection against these two effects, exhibit minimal performance degradation, improved stability, and significantly reduced hysteresis after prolonged gamma radiation exposure. We believe this work provides an insight into graphene's interactions with ionizing radiation that could enable future graphene-based electronic devices to be used for space, military, and other radiationsensitive applications. Published by AIP Publishing.


Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads