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Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

Author:
Goswami, Yogesh   Asthana, Pranav   Basak, Shibir   Ghosh, Bahniman   


Journal:
International Journal of Nanoscience


Issue Date:
2015


Abstract(summary):

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher I-ON/I-OFF ratio, lower threshold voltage and subthreshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.


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