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A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors

Author:
Ye, Yu   Tian, Tong   


Journal:
Journal of Semiconductors


Issue Date:
2013


Abstract(summary):

A 50 GHz cross-coupled voltage controlled oscillator (VCO) considering the coupling effect of inductors based on a 65 nm standard complementary metal oxide semiconductor (CMOS) technology is reported. A pair of inductors has been fabricated, measured and analyzed to characterize the coupling effects of adjacent inductors. The results are then implemented to accurately evaluate the VCO's LC tank. By optimizing the tank voltage swing and the buffer's operation region, the VCO achieves a maximum efficiency of 11.4% by generating an average output power of 2.5 dBm while only consuming 19.7 mW (including buffers). The VCO exhibits a phase noise of -87 dBc/Hz at 1 MHz offset, leading to a figure of merit (FoM) of -167.5 dB/Hz and a tuning range of 3.8% (from 48.98 to 50.88 GHz).


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