Review of Power Electronics Components at Cryogenic Temperatures

Author:

Gui, Handong  Chen, Ruirui  Niu, Jiahao  Zhang, Zheyu  Tolbert, Leon M.  Wang, Fei (Fred)  Blalock, Benjamin J.  Costinett, Daniel  Choi, Benjamin B.  

Journal:

IEEE TRANSACTIONS ON POWER ELECTRONICS

Issue Date:

2020

Abstract(summary):

In order to apply power electronics systems to applications such as superconducting systems under cryogenic temperatures, it is necessary to investigate the characteristics of different parts in the power electronics system. This article reviews the influence of cryogenic temperature on power semiconductor devices including Si and wide bandgap switches, integrated circuits, passive components, interconnection and dielectric materials, and some typical cryogenic converter systems. Also, the basic theories and principles are given to explain the trends for different aspects of cryogenically cooled converters. Based on the review, Si active power devices, bulk Complementary metal-oxide-semiconductor (CMOS) based integrated circuits, nanocrystalline and amorphous magnetic cores, NP0 ceramic and film capacitors, thin/metal film and wirewound resistors are the components suitable for cryogenic operation. Pb-rich PbSn solder or In solder, classic printed circuit boards material, most insulation papers and epoxy encapsulant are good interconnection and dielectric parts for cryogenic temperatures.

Page:

5144---5156