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Device modeling of amorphous oxide semiconductor TFTs

Author:
Abe, Katsumi  Ota, Kazuki  Kuwagaki, Takeshi  


Journal:
JAPANESE JOURNAL OF APPLIED PHYSICS


Issue Date:
2019


Abstract(summary):

Device models of amorphous oxide semiconductor thin-film transistors (AOS TFTs) associate AOS carrier transport and electronic states with AOS TFT electrical characteristics. Thus, such models are very useful for estimation and analysis on operations and reliability of AOS TFTs and developments of electronic devices with AOS TFTs. We discuss the models including mobility models and density of subgap state (DOS) models, which reflect the carrier-electron transport and the electronic states of AOSs. A device simulator employing a carrier-electron density dependent mobility model and an appropriate DOS model can reproduce temperature and electrical characteristics of AOS TFTs. (C) 2019 The Japan Society of Applied Physics


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