Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates

Author:

Roshko, Alexana  Brubaker, Matt  Blanchard, Paul  Harvey, Todd  Bertness, Kris A.  

Journal:

CRYSTALS

Issue Date:

2018

Abstract(summary):

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AIN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al-Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.