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Ultraviolet light-emitting diodes and photodiodes grown by plasma-assisted molecular beam epitaxy

Author:
Nechaev, D. V.  Evropeytsev, E. A.  Semenov, A. N.  Troshkov, S. I.  Egorkin, V. I.  Zemlyakov, V. E.  Rzheutski, M. V.  Lutsenko, E. V.  Toropov, A. A.  Ivanov, S. V.  Jmerik, V. N.  


Journal:
19TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS


Issue Date:
2018


Abstract(summary):

We demonstrate a Schottky ultraviolet photodiode (UV-PD) and a UV light-emitting diode (UV-LED) based on AlGaN heterostructures grown by plasma-assisted molecular beam epitaxy. The spectral responsivity of the Schottky UV-PD is 3 mA/W at 271 nm at zero bias and decreases by two orders of magnitude for the spectral range of longer wavelengths (> 300 nm). The sub-monolayer digital alloying technique was used for growing the AlGaN quantum wells in UV-LEDs emitting a single electroluminescence peak at 273 nm.


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