Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Robust two-dimensional bipolar magnetic semiconductors by defect engineering

Author:
Cheng, Haixia  Zhou, Jun  Yang, Ming  Shen, Lei  Linghu, Jiajun  Wu, Qingyun  Qian, Ping  Feng, Yuan Ping  


Journal:
JOURNAL OF MATERIALS CHEMISTRY C


Issue Date:
2018


Abstract(summary):

Bipolar magnetic semiconductors (BMS) are promising for applications in spintronic devices and quantum computers as 100% spin polarized currents with reversible spin direction can be easily controlled by a gate voltage in such materials. Herein, we perform first-principles calculations to investigate the structural and electronic properties of intrinsic defects in monolayer half-semiconductor CrSiTe3. Our calculations show that Cr-Si or Si-Cr antisite defects which are thermodynamically dominating in CrSiTe3 can trigger the bipolar magnetic property in CrSiTe3. These BMS characters are robust and survive under a large applied external biaxial tensile strain and electric field. Our results demonstrate a new path to design BMS materials by defect engineering, promoting the applications of two-dimensional magnetic materials in spintronics.


Page:
8435---8443


Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads