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Investigation of the GaN/Al2O3 Interface by First Principles Calculations

Author:
Chokawa, Kenta  Kojima, Eiji  Araidai, Masaaki  Shiraishi, Kenji  


Journal:
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS


Issue Date:
2018


Abstract(summary):

Metal-oxide-semiconductor field effect transistors (MOSFETs) based on GaN have been studied for high-power performance because of the wide bandgap of GaN. Although Al2O3 is a promising dielectric film for GaN power devices, the interface structure of GaN/Al2O3 has not been revealed microscopically. We prepared two interface models with Ga-O bonds and Ga-Al bonds at the interface. Because the Ga-O bond is stronger than the Ga-Al bond, the Ga-O bonds are preferentially formed at the interface. When the Ga-Al bonds appear at the interface, they introduce defect levels in the bandgap of GaN. On the other hand, when the interface consists of Ga-O bonds, some defect structures can appear depending on the oxygen density. In oxygen-rich conditions, dangling bonds appear at the N atoms and their states appear around the valence band maximum.


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