Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

The 2018 GaN power electronics roadmap

Author:
Amano, H.  Baines, Y.  Beam, E.  Borga, Matteo  Bouchet, T.  Chalker, Paul R.  Charles, M.  Chen, Kevin J.  Chowdhury, Nadim  Chu, Rongming  De Santi, Carlo  De Souza, Maria Merlyne  Decoutere, Stefaan  Di Cioccio, L.  Eckardt, Bernd  Egawa, Takashi  Fay, P.  Freedsman, Joseph J.  Guido, L.  Haeberlen, Oliver  Haynes, Geoff  Heckel, Thomas  Hemakumara, Dilini  Houston, Peter  Hu, Jie  Hua, Mengyuan  Huang, Qingyun  Huang, Alex  Jiang, Sheng  Kawai, H.  Kinzer, Dan  Kuball, Martin  Kumar, Ashwani  Lee, Kean Boon  Li, Xu  Marcon, Denis  Maerz, Martin  McCarthy, R.  Meneghesso, Gaudenzio  Meneghini, Matteo  Morvan, E.  Nakajima, A.  Narayanan, E. M. S.  Oliver, Stephen  Palacios, Tomas  Piedra, Daniel  Plissonnier, M.  Reddy, R.  Sun, Min  Thayne, Iain  Torres, A.  Trivellin, Nicola  Unni, V.  Uren, Michael J.  Van Hove, Marleen  Wallis, David J.  Wang, J.  Xie, J.  Yagi, S.  Yang, Shu  Youtsey, C.  Yu, Ruiyang  Zanoni, Enrico  Zeltner, Stefan  Zhang, Yuhao  


Journal:
JOURNAL OF PHYSICS D-APPLIED PHYSICS


Issue Date:
2018


Abstract(summary):

Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads