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Effect of Surface Passivation on the Electrical Characteristics of Nanoscale AlGaN/GaN HEMT

Author:
Gupta, Akriti  Chatterjee, Neel  Kumar, Pradeep  Pandey, Sujata  


Journal:
INTERNATIONAL CONFERENCE ON MATERIALS, ALLOYS AND EXPERIMENTAL MECHANICS (ICMAEM-2017)


Issue Date:
2017


Abstract(summary):

In this paper, we present the effect of passivation layer on the electrical characteristics of AlGaN/GaN HEMT. The energy band diagram, drain current voltage characteristics, transconductance and cut off frequency was calculated for both long channel and short channel devices. It was found that the electrical characteristics of the device improve with the introduction of high K dielectric in the passivation layer. The results obtained agree well with the data available in literature.


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