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Single nanowire green InGaN/GaN light emitting diodes

Author:
Zhang, Guogang  Li, Ziyuan  Yuan, Xiaoming  Wang, Fan  Fu, Lan  Zhuang, Zhe  Ren, Fang-Fang  Liu, Bin  Zhang, Rong  Tan, Hark Hoe  Jagadish, Chennupati  


Journal:
NANOTECHNOLOGY


Issue Date:
2016


Abstract(summary):

y Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.


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