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Controlling BTBT-Induced Parasitic BJT Action in Junctionless FETs Using a Hybrid Channel

Author:
Kumar, Mamidala Jagadesh  Sahay, Shubham  


Journal:
IEEE TRANSACTIONS ON ELECTRON DEVICES


Issue Date:
2016


Abstract(summary):

In this brief, we demonstrate for the first time that the presence of a hybrid channel, which consists of a p(+) layer below the n(+) active device layer in a junctionless (JL) FET, leads to a drastically reduced BTBT-induced parasitic BJT action. Using calibrated 2-D simulations, we show that the JLFET with a p(+) layer [which we call hole sink (HS)] has a significantly low OFF-state leakage current due to an increased tunneling barrier width, an enhanced source-to-channel barrier height, and a better provision for collecting the band-to-band tunneling (BTBT) generated holes, which results in a diminished parasitic BJT action in the OFF-state. Further, the proposed HS JLFET shows an extremely high ON-state to OFF-state current (I-ON/I-OFF) ratio of similar to 10(7) for a channel length of 10 nm and a significant (I-ON/I-OFF) ratio of similar to 10(4) even for a channel length of 5 nm.


Page:
3350---3353


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