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Realizing Efficient Volume Depletion in SOI Junctionless FETs

Author:
Sahay, Shubham  Kumar, Mamidala Jagadesh  


Journal:
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY


Issue Date:
2016


Abstract(summary):

In this paper, we provide a simple and effective solution to realize efficient volume depletion and therefore, significantly reduce the OFF-state leakage current of a junctionless FET (JLFET) by replacing the SiO2 by HfO2 in the buried oxide (BOX). Using calibrated 2-D simulations, we show that the JLFET with a high-k BOX (HB JLFET) exhibits a considerably high I-ON/I-OFF ratio of similar to 10(6) even for a channel length of 20 nm. Further, we demonstrate that the use of a high-k BOX leads to a reduction in both gate capacitance C-g and gate-to-drain feedback (Miller) capacitance C-gd.


Page:
110---115


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