In this paper, we provide a simple and effective solution to realize efficient volume depletion and therefore, significantly reduce the OFF-state leakage current of a junctionless FET (JLFET) by replacing the SiO2 by HfO2 in the buried oxide (BOX). Using calibrated 2-D simulations, we show that the JLFET with a high-k BOX (HB JLFET) exhibits a considerably high I-ON/I-OFF ratio of similar to 10(6) even for a channel length of 20 nm. Further, we demonstrate that the use of a high-k BOX leads to a reduction in both gate capacitance C-g and gate-to-drain feedback (Miller) capacitance C-gd.
Page:
110---115
Related
Batch download
Cited By
noting
Similar Literature
Submit Feedback
Please wait while the file you selected is being converted