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Hybrid Area-Emitting Transistors:Solution Processable and with High Aperture Ratios

Author:
Muhieddine, Khalid  Ullah, Mujeeb  Maasoumi, Fatemeh  Burn, Paul L.  Namdas, Ebinazar B.  


Journal:
ADVANCED MATERIALS


Issue Date:
2015


Abstract(summary):

Area emission is realized in all-solution-processed hybrid light-emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.


Page:
6677---+


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