Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Reliability improvement in GaN HEMT power device using a field plate approach

Author:
Wu, Wen-Hao  Lin, Yueh-Chin  Chin, Ping-Chieh  Hsu, Chia-Chieh  Lee, Jin-Hwa  Liu, Shih-Chien  Maa, Jer-Shen  Iwai, Hiroshi  Chang, Edward Yi  Hsu, Heng-Tung  


Journal:
SOLID-STATE ELECTRONICS


Issue Date:
2017


Abstract(summary):

This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach. (C) 2017 Elsevier Ltd. All rights reserved.


Page:
64---69


Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads