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A Tunnel Dielectric-Based Junctionless Transistor With Reduced Parasitic BJT Action

Author:
Lahgere, Avinash  Kumar, Mamidala Jagadesh  


Journal:
IEEE TRANSACTIONS ON ELECTRON DEVICES


Issue Date:
2017


Abstract(summary):

In this paper, we demonstrate a tunnel dielectric-based junctionless transistor, referred as TD JLT, which consists of a thin dielectric layer in the middle of the channel region of a JLT leading to a drastically reduced parasitic bipolar junction transistor (BJT) action. Using calibrated 2-D simulations, we show that the proposed TD JLT has a significantly low off-state leakage current due to the presence of a tunneling barrier, and an enhanced sourceto- channel barrier height, which results in a diminished parasitic BJT action in the off-state. Further, the proposed TD JLT exhibits an extremely high I-ON/I-OFF ratio of similar to 1.1x10(7) for a channel length of 20 nm and a significant(I-ON/I-OFF) ratio of similar to 10(2) even for a channel length of 10 nm.


Page:
3470---3475


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