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The Charge Plasma n-p-n Impact Ionization MOS on FDSOI Technology:Proposal and Analysis

Author:
Lahgere, Avinash  Kumar, Mamidala Jagadesh  


Journal:
IEEE TRANSACTIONS ON ELECTRON DEVICES


Issue Date:
2017


Abstract(summary):

In this paper, we propose the charge plasma n-p-n impact ionization MOS (I-MOS) on a lightly doped p-type silicon film using the charge plasma concept. The performance of the proposed device is exhaustively investigated using 2-D simulations. The proposed device does not have metallurgical junctions and needs no chemical doping for creating the source and drain regions. Therefore, the proposed device combines the benefits of the bipolar I-MOS (low avalanche breakdown voltage and immunity toward the hot carrier injection) and a junctionless FET (low thermal budget process). The proposed charge plasma n-p-n I-MOS exhibits excellent electrical characteristics, such as a low avalanche breakdown voltage (VB) of 2.123 V, a steep subthreshold swing of 4.53 mV/decade, and an I-ON/I-OFF ratio of similar to 10(6), as compared with the conventional bipolar I-MOS.


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