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Lithographically defined aluminum nitride cross-sectional Lame mode resonators

Author:
Chen, G.  Cassella, C.  Qian, Z.  Hummel, G. E.  Rinaldi, M.  


Journal:
JOURNAL OF MICROMECHANICS AND MICROENGINEERING


Issue Date:
2017


Abstract(summary):

This paper reports on aluminum nitride (AlN) cross-sectional Lame mode resonators (CLMRs) showing high electromechanical coupling coefficient (k(t)(2)) in excess of 4% in a lithographically defined 307 MHz frequency range around 920 MHz. In addition, we report the performance of a CLMR showing a figure of merit (FoM, defined as the product of quality factor, Q, and k(t)(2)) in excess of 85. To the best of the authors' knowledge, such FoM value is the highest reported for AlN resonators using interdigitated metal electrodes (IDTs).


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