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Study of spiral growth on 4H-silicon carbide on-axis substrates

Author:
Masumoto, Keiko  Kojima, Kazutoshi  Okumura, Hajime  


Journal:
JOURNAL OF CRYSTAL GROWTH


Issue Date:
2017


Abstract(summary):

We grew epitaxial layers on on-axis carbon-face 4H-silicon carbide substrates and investigated the growth conditions for the generation of spiral growth. We discovered that spiral growth occurs in regions where the local off-angle is less than 0.05 degrees and when the spiral hillocks have a tilt angle of 0.06 degrees. Moreover, we found that each spiral hillock coalesced without causing dislocation in the areas where the spiral growth occurred. Our results indicate that spiral growth is dominant when the spiral hillocks have a tilt angle greater than the off-angle of the substrate. Step-flow growth is overcome by spiral growth because the rate of spiral growth is greater than that of step-flow growth. (C) 2017 Elsevier B.V. All rights reserved.


Page:
251---255


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