Organic/inorganic F8T2/GaN light emitting heterojunction

Author:

Wu, Y. J.  Liao, C. H.  Lee, P. M.  Liu, Y. S.  Liu, C. L.  Liu, C. Y.  

Journal:

ORGANIC ELECTRONICS

Issue Date:

2017

Abstract(summary):

An organic/inorganic white-light emitting F8T2 (9,9-dioctylfluorene-co-bithiophene)/GaN heterojunction is reported. The white-light emission is produced by hybridizing the blue light (464 nm) emitted from the GaN MQWs and the yellow/green light (500-650 nm) emitted at the F8T2/p-GaN interface by electroluminescence (EL). The yellow/green light emission in the F8T2 layer is resulted from the carrier accumulation and Frenkel excitons at the F8T2/p-GaN junction interface. It is concluded that the energy barrier and large mobility discrepancy at the F8T2/p-GaN junction interface cause carriers accumulating in the F8T2 side near the F8T2/p-GaN interface. The accumulated carriers at the F8T2/p-GaN interface form Frenkel excitons by Coulombic interaction. Then, the Frenkel excitons recombine to radiate the yellow/green emission in the F8T2 layer. The International Commission on Illumination (CIE) coordinate of the white-light emitted from the present device is at (0.28, 0.30), which is very close to the standard white light (0.33, 0.33). (C) 2017 Elsevier B.V. All rights reserved.

Page:

64---68