Characterization of Zn2SnO4 Thin Films Prepared by RF Magnetron Sputtering

Author:

Tang, Tian Yu  Ren, Sheng Qiang  Liu, Yuan  Zhang, Jing Quan  Liu, Cai  Wu, Li Li  Wang, Wen Wu  Li, Wei  Feng, Liang Huan  

Journal:

RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY B

Issue Date:

2018

Abstract(summary):

Zn2SnO4 (ZTO) is a stable semiconductor in ZnO-SnO2 system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn2SnO4 ceramic target in this paper. The effects of annealing temperatures and oxygen contents on characterization of ZTO thin films were studied. The results show that ZTO thin films prepared by RF magnetron sputtering are amorphous with an optical band gap of 3.22 eV. After annealing at 650A degrees C in Ar atmosphere for 40 min, ZTO films possess a spinel structure with an optical band gap of 3.62 eV. The atomic force microscope (AFM) data of morphology reveals that the surface roughness of films is about 2 nm. The results of energy dispersive spectrometer (EDS) show that the concentration ratio of Zn to Sn is in the range from 1.44 to 1.57. The results of Hall-effect-measurement system reveal that the resistivity of films varies from 102 to 10-1 Omega cm, carrier concentration is about 10(17) cm(-3), and mobility ranges from 10(0) to 10(1) cm(2) v(-1) s(-1).

Page:

503---509