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A field effect transistor modified with reduced graphene oxide for immunodetection of Ebola virus

Author:
Jin, Xin  Zhang, Hong  Li, Yu-Tao  Xiao, Meng-Meng  Zhang, Zhi-Ling  Pang, Dai-Wen  Wong, Gary  Zhang, Zhi-Yong  Zhang, Guo-Jun  


Journal:
MICROCHIMICA ACTA


Issue Date:
2019


Abstract(summary):

The authors describe a field effect transistor (FET) based immunoassay for the detection of inactivated ebola virus (EBOV). An equine antibody against the EBOV glycoprotein was immobilized on the surface of the FET that was previously modified with reduced graphene oxide (RGO). The antibody against EBOV was immobilized on the modified FET, and the response to EBOV was measured as a function of the shift of Dirac voltage. The method can detect the EBOV over the concentration range from 2.4x10(-12)g mL( -1) to 1.2x10(-7)g mL( -1) and with a limit of detection as low as 2.4pg mL( -1). The assay has satisfactory specificity and was applied to the quantitation of inactivated EBOV in spiked serum.


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