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Double gate impact ionization MOS transistor: Proposal and investigation

Author:
Zhaonian Yang  Yue Zhang  Yuan Yang  Ningmei Yu  


Journal:
Superlattices and Microstructures


Issue Date:
2017


Abstract(summary):

Abstract In this paper, a double gate impact ionization MOS (DG-IMOS) transistor with improved performance is proposed and investigated by TCAD simulation. In the proposed design, a second gate is introduced in a conventional impact ionization MOS (IMOS) transistor that lengthens the equivalent channel length and suppresses the band-to-band tunneling. The OFF-state leakage current is reduced by over four orders of magnitude. At the ON-state, the second gate is negatively biased in order to enhance the electric field in the intrinsic region. As a result, the operating voltage does not increase with the increase in the channel length. The simulation result verifies that the proposed DG-IMOS achieves a better switching characteristic than the conventional is achieved. Lastly, the application of the DG-IMOS is discussed theoretically. Highlights • The double gate structure IMOS transistor is proposed which has a better performance. • The leakage current is significantly reduced by enlarging the equivalent channel length. • The operating voltage does not increase due to the enhanced electric field. • The potential application of the double gate IMOS is discussed.


Page:
477-477


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