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Effect of Mg addition on the physical properties of aluminum nitride

Author:
Sri Ayu Anggraini  Masato Uehara  Hiroshi Yamada  Morito Akiyama  


Journal:
Materials Letters


Issue Date:
2018


Abstract(summary):

Highlights • c -Axis oriented Alx Mg 1-x N thin films were deposited on Si (1 0 0) using rf sputtering. • Low Mg doping to AlN enhanced the piezoelectric response up to 7.4 pC/N. • Low Mg addition into AlN could increase the stiffness of the thin film. Abstract We are reporting the effect of magnesium (Mg) addition into aluminum nitride (AlN) on piezoelectric and mechanical properties. Addition of 2.5 at.% Mg was found to slightly enhance both the piezoelectric constant ( d 33 ) (up to 7.4 pC/N) and the relative permittivity (up to 12). Young’s modulus and hardness were decreased when 2.5 at.% Mg was added into AlN and were slightly increased for sample with 5 at.% Mg addition. The dielectric loss was less than 10 −2 for samples with Mg addition lower than 8 at.%. However, higher Mg addition (>8 at.%) led to a lower d 33 , higher relativity permittivity while decreasing Young’s modulus and hardness.


Page:
247-247


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