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Atomic rearrangements at migration of symmetric tilt grain boundaries in vanadium

Author:
Dmitrij S. Kryzhevich  Konstantin P. Zolnikov  Aleksandr V. Korchuganov  


Journal:
Computational Materials Science


Issue Date:
2018


Abstract(summary):

Graphical abstract Abstract The paper reports on a molecular dynamics study of atomic rearrangements and migration of symmetric tilt grain boundaries in a vanadium crystallite under shear load specified as constant-velocity displacements of its faces parallel to the boundary plane. The study shows that such grain boundaries migrate normal to their plane with a high velocity and that this velocity depends on their structure and on the shear rate. The migration is jump-like, involves a periodic rise and drop of internal stress, and represents a sequence of specific self-consistent structural rearrangements in grain boundary regions.


Page:
445-445


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