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Controlling the profile of high aspect ratio gratings in diamond

Author:
Ernesto Vargas Catalan  Pontus Forsberg  Olivier Absil  Mikael Karlsson  


Journal:
Diamond and Related Materials


Issue Date:
2016


Abstract(summary):

Abstract Diamond is an excellent material for infrared optics and for applications in harsh environments. Some of those desirable properties, i.e. hardness and chemical inertness, also make it a challenging material to machine and etch. In this study we have tested a wide range of etch parameters in an inductively coupled plasma etcher, in order to produce highly controlled, high aspect ratio gratings in diamond. We discuss the effects of pressure, bias power, and some gas mixture variation (pure oxygen and argon-oxygen) on the etch results and how it impacts the etch mask sputtering and redeposition. We also present a method for applying a fresh aluminum mask, in order to etch even deeper optical grating. Gratings with aspect ratios as high as 1:13.5 have been achieved with a 1.42 μm grating period. Graphical abstract Highlights • We study ICP diamond etching by changing the; bias power, gas mixture and pressure. • O 2 with high bias at a low pressure gives high etch rates and low sidewall angles. • Ar/O 2 with low bias at high pressure yields higher angles and etches slower. • We examined a new process based on re-sputtering of an Al mask. • The re-sputtering process made it possible to achieve deep diamond gratings.


Page:
60-60


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