Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

DLTS characterization of defects in GaN induced by electron beam exposure

Author:
Ngoepe, P.N.M.   Meyer, W.E.   Auret, F.D.   Omotoso, E.   Diale, M.  


Journal:
Materials Science in Semiconductor Processing


Issue Date:
2017


Page:
29-31


Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads