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A Novel Fabrication Method for the Nanoscale Tunneling Field Effect Transistor

Author:
Kim, Hyun Woo   Kim, Jang Hyun   Kim, Sang Wan   Sun, Min-Chul   Kim, Garam   Park, Euyhwan   Kim, Hyungjin   Kim, Kyung-Wan   Park, Byung-Gook  


Journal:
Journal of Nanoscience and Nanotechnology


Issue Date:
2012


Abstract(summary):

Tunneling Field Effect Transistors (TFETs) are considered as a candidate for low power applications. However, most of TFETs have been researched on only for long channels due to the misalignment problem that occurs during the source/drain doping process in device fabrication. Thus, a new method is proposed for the fabrication of TFETs in nanoscale regions. This proposed fabrication process does not need an additional mask to define the source/drain regions, and makes it possible to form a self-aligned source/drain doping process. In addition, through TCAD simulation, the electrical characteristics of a TFET with dopant engineering and a rounded gate edge shape for a higher on/off current ratio were investigated. As a result, the TFET showed the properties of a larger on-current, a lower average subthreshold swing (58.5 mV/dec), and a 30-fold smaller leakage current compared to the conventional TFET. The TFET with dopant engineering and a rounded gate edge shape can also be fabricated simply through the proposed fabrication process.


Page:
5592-5597


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