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Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

Author:
Riha, Shannon C.   Koegel, Alexandra A.   Meng, Xiangbo   Kim, In Soo   Cao, Yanqiang   Pellin, Michael J.   Elam, Jeffrey W.   Martinson, Alex B. F.  


Journal:
ACS Applied Materials & Interfaces


Issue Date:
2016


Abstract(summary):

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure γ-MnS thin films were deposited, while at temperatures >150 °C, a mixed phase consisting of both γ- and α-MnS resulted. In situ quartz crystal microbalance (QCM) studies validate the self-limiting behavior of both ALD half-reactions and, combined with quadrupole mass spectrometry (QMS), allow the derivation of a self-consistent reaction mechanism. Finally, MnS thin films were deposited on copper foil and tested as a Li-ion battery anode. The MnS coin cells showed exceptional cycle stability and near-theoretical capacity.


Page:
acsami.5b11075


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