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Fatigueless Ferroelectric Capacitors with Ruthenium Bottom and Top Electrodes Formed by Metalorganic Chemical Vapor Deposition

Author:
T. Furukawa   T. Kuroiwa   Y. Fujisaki   T. Sato   H. Ishiwara  


Journal:
Japanese Journal of Applied Physics, Part 2 (Letters)


Issue Date:
2005


Abstract(summary):

Ferroelectric Ru/Bi 4-xLa xTi 3O 12/Ru capacitors were fabricated by combining metalorganic chemical vapor deposition (MOCVD) of top and bottom Ru electrodes and spin-coating of the ferroelectric film. After optimization of the deposition conditions, good ferroelectric properties (2P r=18muC/cm 2, P r: remanent polarization) and low leakage current density (2times10 -6 A/cm 2) were achieved. No significant fatigue phenomenon (decrease of P r) was observed even after 10 10 switching cycles


Page:
L378---L380L380


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