Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Creat membership Creat membership
Sign in

Forgot password?

Confirm
  • Forgot password?
    Sign Up
  • Confirm
    Sign In
Collection
For ¥0.57 per day, unlimited downloads CREATE MEMBERSHIP Download

toTop

If you have any feedback, Please follow the official account to submit feedback.

Turn on your phone and scan

home > search >

Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) Substrates

Author:
Nagasawa, Hiroyuki   Kawahara, Takamitsu   Yagi, Kuniaki  


Journal:
Materials Science Forum


Issue Date:
2002


Abstract(summary):

Large-diameter 3C-SiC was grown epitaxially on a Si(001) substrate which covered with countered slopes oriented in the [110] and [110] directions (undulant twin boundaries) oriented in the [111] or [111] directions and its edges (incoherent twin boun%daries) along the <110> axes. The expanding and vanishing mechanisms of twinning domains are discussed.


Page:
319-322


VIEW PDF

The preview is over

If you wish to continue, please create your membership or download this.

Create Membership

Similar Literature

Submit Feedback

This function is a member function, members do not limit the number of downloads