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Author:: Khanna Vinod Kumar
Journal:: European Journal of Physics
Issue Date:: 2004
Abstract(summary):: The existence of a multiplicity of carrier lifetimes and their inextricable linkage to the measurement technique, injection level and position of the recombination centre in the forbidden energy gap presents difficulties in the teaching of this key semiconductor parameter controlling the performance of semiconductor devices such as diodes, transistors, insulated gate bipolar transistors, thyristors and solar cells. This paper points out that in the teaching of carrier lifetime in semiconductor device courses, the types of lifetime, their physical significance and underlying recombination-generation mechanisms should be introduced and the correlation of each lifetime with the terminal property of the semiconductor device should be highlighted. The use of a particular method for measurement of the relevant lifetime and the injection level of carriers chosen should be explained. The paper provides an update on the important considerations about carrier lifetimes which need to be stressed by the teacher
Page:: 221-237