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Properties of GaN layers grown on N-face free-standing GaN substrates

Author:
Li, Xun   Hemmingsson, Carl   Forsberg, Urban   Janzén, Erik   Pozina, Galia  


Journal:
Journal of Crystal Growth


Issue Date:
2015


Abstract(summary):

GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-wall metalorganic chemical vapor deposition method. By using optimized growth parameters, layers with a smooth morphology were obtained. The crystalline quality of epilayers was studied by a high resolution X-ray diffraction technique and compared to the substrates. Optical properties of the epilayers studied by low temperature time-resolved photoluminescence have shown longer recombination time for donor-bound exciton compared to the substrates. (C) 2014 Elsevier B.V. All rights reserved.


Page:
81-85


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