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A laterally graded junctionless transistor

Author:
Bal, Punyasloka   Ghosh, Bahniman   Mondal, Partha   Akram, M. W.  


Journal:
Journal of Semiconductors


Issue Date:
2014


Abstract(summary):

This paper proposes a laterally graded junctionless transistor taking peak doping concentration near the source and drain region, and a gradual decrease in doping concentration towards the center of the channel to improve the IOFF and ION/ IOFF ratio. The decrease of doping concentration in the lateral direction of the channel region depletes a greater number of charge carriers compared to the uniformly doped channel in the OFF-state, which in turn suppresses the OFF state current flowing through the device without greatly affecting the ON state current.


Page:
034003


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