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Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor

Author:
Lu, Yen-Cheng   Chen, Yung-Sheng   Tsai, Fu-Ji   Wang, Jyh-Yang   Lin, Cheng-Hung   Chen, Cheng-Yen   Kiang, Yean-Woei   Yang, C. C.  


Journal:
Applied Physics Letters


Issue Date:
2009


Abstract(summary):

The improved emission enhancement in surface plasmon polariton (SPP) coupling with an InGaN/GaN quantum well (QW) by inserting a SiO(2) layer of lower refractive index between the deposited Ag and GaN layers is experimentally and numerically demonstrated. The inserted SiO(2) layer leads to reduced SPP dissipation rate, increased evanescent field intensity beyond a certain depth in GaN, and decreased SPP density of state. The combination of these factors can result in further emission enhancement of QW through SPP coupling. For light-emitting diode application, the elongated evanescent field coverage can release the constraint of thin p-type GaN for effective SPP coupling. More importantly, the reduced SPP dissipation can result in more effective emission in such an SPP-QW coupling mechanism.


Page:
233113


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